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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRF7464TRPBF

IRF7464TRPBF

MOSFET N-CH 200V 1.2A 8SO

Infineon Technologies

7,082
IRF7464TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1.2A (Ta) 10V 730mOhm @ 720mA, 10V 5.5V @ 250µA 14 nC @ 10 V ±30V 280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7834TRPBF

IRF7834TRPBF

MOSFET N-CH 30V 19A 8SO

Infineon Technologies

8,493
IRF7834TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7460TRPBF

IRF7460TRPBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies

3,221
IRF7460TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 2050 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7453TRPBF

IRF7453TRPBF

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies

4,628
IRF7453TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7433TRPBF

IRF7433TRPBF

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies

3,474
IRF7433TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V 900mV @ 250µA 20 nC @ 4.5 V ±8V 1877 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7457TRPBF

IRF7457TRPBF

MOSFET N-CH 20V 15A 8SO

Infineon Technologies

9,489
IRF7457TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V 3V @ 250µA 42 nC @ 4.5 V ±20V 3100 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7207TRPBF

IRF7207TRPBF

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies

3,024
IRF7207TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tc) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFU120ZPBF

IRFU120ZPBF

MOSFET N-CH 100V 8.7A IPAK

Infineon Technologies

8,651
IRFU120ZPBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRLU4343PBF

IRLU4343PBF

MOSFET N-CH 55V 26A I-PAK

Infineon Technologies

8,183
IRLU4343PBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRFU3504ZPBF

IRFU3504ZPBF

MOSFET N-CH 40V 42A IPAK

Infineon Technologies

4,962
IRFU3504ZPBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFU2905ZPBF

IRFU2905ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies

6,264
IRFU2905ZPBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFU12N25DPBF

IRFU12N25DPBF

MOSFET N-CH 250V 14A IPAK

Infineon Technologies

6,435
IRFU12N25DPBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRLU3705ZPBF

IRLU3705ZPBF

MOSFET N-CH 55V 42A IPAK

Infineon Technologies

3,381
IRLU3705ZPBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
FDC3616N

FDC3616N

MOSFET N-CH 100V 3.7A SUPERSOT6

onsemi

3,602
FDC3616N

Технический лист

PowerTrench® 6-SSOT Flat-lead, SuperSOT™-6 FLMP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.7A (Ta) 6V, 10V 70mOhm @ 3.7A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1215 pF @ 50 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6 FLMP
FDC697P_F077

FDC697P_F077

MOSFET P-CH 20V 8A SUPERSOT6

onsemi

5,869
FDC697P_F077

Технический лист

PowerTrench® 6-SSOT Flat-lead, SuperSOT™-6 FLMP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 1.8V, 4.5V 20mOhm @ 8A, 4.5V 1.5V @ 250µA 55 nC @ 4.5 V ±8V 3524 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6 FLMP
FDFS2P102

FDFS2P102

MOSFET P-CH 20V 3.3A 8SOIC

onsemi

8,538
FDFS2P102

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.3A (Ta) 4.5V, 10V 125mOhm @ 3.3A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 270 pF @ 10 V Schottky Diode (Isolated) 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDJ128N

FDJ128N

MOSFET N-CH 20V 5.5A SC75-6 FLMP

onsemi

7,083
FDJ128N

Технический лист

PowerTrench® SC-75-6 FLMP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 2.5V, 4.5V 35mOhm @ 5.5A, 4.5V 1.5V @ 250µA 8 nC @ 5 V ±12V 543 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC75-6 FLMP
FDJ129P

FDJ129P

MOSFET P-CH 20V 4.2A SC75-6 FLMP

onsemi

7,803
FDJ129P

Технический лист

PowerTrench® SC-75-6 FLMP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 70mOhm @ 4.2A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 780 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC75-6 FLMP
FDS2170N3

FDS2170N3

MOSFET N-CH 200V 3A 8SOIC

onsemi

7,767
FDS2170N3

Технический лист

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO FLMP
FDS2170N7

FDS2170N7

MOSFET N-CH 200V 3A 8SOIC

onsemi

5,427
FDS2170N7

Технический лист

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO FLMP

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