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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRF7822PBF

IRF7822PBF

MOSFET N-CH 30V 18A 8SO

Infineon Technologies

9,679
IRF7822PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V 6.5mOhm @ 15A, 4.5V 1V @ 250µA 60 nC @ 5 V ±12V 5500 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7832PBF

IRF7832PBF

MOSFET N-CH 30V 20A 8SO

Infineon Technologies

5,404
IRF7832PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SO
IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8SO

Infineon Technologies

3,981
IRF7834PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8113PBF

IRF8113PBF

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies

9,692
IRF8113PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFR120NTRRPBF

IRFR120NTRRPBF

MOSFET N-CH 100V 9.4A DPAK

Infineon Technologies

2,519
IRFR120NTRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) - - - Surface Mount TO-252AA (DPAK)
IRFR220NTRRPBF

IRFR220NTRRPBF

MOSFET N-CH 200V 5A DPAK

Infineon Technologies

5,521
IRFR220NTRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR2905ZPBF

IRFR2905ZPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies

2,048
IRFR2905ZPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3303TRLPBF

IRFR3303TRLPBF

MOSFET N-CH 30V 33A DPAK

Infineon Technologies

7,678
IRFR3303TRLPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
64-4059PBF

64-4059PBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

6,246
64-4059PBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
94-4156PBF

94-4156PBF

MOSFET N-CH 20V 75A DPAK

Infineon Technologies

6,196
94-4156PBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3707ZPBF

IRFR3707ZPBF

MOSFET N-CH 30V 56A DPAK

Infineon Technologies

2,242
IRFR3707ZPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3708TRRPBF

IRFR3708TRRPBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies

6,621
IRFR3708TRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3709ZPBF

IRFR3709ZPBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies

8,382
IRFR3709ZPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2330 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3711ZPBF

IRFR3711ZPBF

MOSFET N-CH 20V 93A DPAK

Infineon Technologies

4,048
IRFR3711ZPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR4104PBF

IRFR4104PBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies

9,094
IRFR4104PBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR4105ZPBF

IRFR4105ZPBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

7,324
IRFR4105ZPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR5305TRRPBF

IRFR5305TRRPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies

7,341
IRFR5305TRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) - - - Surface Mount TO-252AA (DPAK)
IRFR6215TRRPBF

IRFR6215TRRPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

4,733
IRFR6215TRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR9210TRLPBF

IRFR9210TRLPBF

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix

7,644
IRFR9210TRLPBF

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR9N20DTRLPBF

IRFR9N20DTRLPBF

MOSFET N-CH 200V 9.4A DPAK

Infineon Technologies

6,022
IRFR9N20DTRLPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)

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