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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRF7842PBF

IRF7842PBF

MOSFET N-CH 40V 18A 8SO

Infineon Technologies

3,168
IRF7842PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 2.25V @ 250µA 50 nC @ 4.5 V ±20V 4500 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7492PBF

IRF7492PBF

MOSFET N-CH 200V 3.7A 8SO

Infineon Technologies

3,523
IRF7492PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 79mOhm @ 2.2A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 1820 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7406PBF

IRF7406PBF

MOSFET P-CH 30V 5.8A 8SO

Infineon Technologies

6,108
IRF7406PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7494PBF

IRF7494PBF

MOSFET N-CH 150V 5.1A 8SO

Infineon Technologies

9,974
IRF7494PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5.1A (Ta) 10V 44mOhm @ 3.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1783 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7241PBF

IRF7241PBF

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies

5,547
IRF7241PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7478PBF

IRF7478PBF

MOSFET N-CH 60V 7A 8SO

Infineon Technologies

3,814
IRF7478PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 4.5V, 10V 26mOhm @ 4.2A, 10V 3V @ 250µA 31 nC @ 4.5 V ±20V 1740 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7401PBF

IRF7401PBF

MOSFET N-CH 20V 8.7A 8SO

Infineon Technologies

8,428
IRF7401PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 20 V 8.7A (Ta) 2.7V, 4.5V 22mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 48 nC @ 4.5 V ±12V 1600 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7469PBF

IRF7469PBF

MOSFET N-CH 40V 9A 8SO

Infineon Technologies

4,698
IRF7469PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7807D2PBF

IRF7807D2PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,208
IRF7807D2PBF

Технический лист

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7807PBF

IRF7807PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

4,946
IRF7807PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Tc) - - - Surface Mount 8-SO
IRF7465PBF

IRF7465PBF

MOSFET N-CH 150V 1.9A 8SO

Infineon Technologies

2,105
IRF7465PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7484PBF

IRF7484PBF

MOSFET N-CH 40V 14A 8SO

Infineon Technologies

9,687
IRF7484PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7402PBF

IRF7402PBF

MOSFET N-CH 20V 6.8A 8SO

Infineon Technologies

8,120
IRF7402PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 2.7V, 4.5V 35mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7477PBF

IRF7477PBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

9,539
IRF7477PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7471PBF

IRF7471PBF

MOSFET N-CH 40V 10A 8SO

Infineon Technologies

5,335
IRF7471PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 32 nC @ 4.5 V ±20V 2820 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7204PBF

IRF7204PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

4,058
IRF7204PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 4.5V, 10V 60mOhm @ 5.3A, 10V 2.5V @ 250µA 25 nC @ 10 V ±12V 860 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF9410PBF

IRF9410PBF

MOSFET N-CH 30V 7A 8SO

Infineon Technologies

2,286
IRF9410PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7403PBF

IRF7403PBF

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies

5,256
IRF7403PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7488PBF

IRF7488PBF

MOSFET N-CH 80V 6.3A 8SO

Infineon Technologies

9,423
IRF7488PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) - - - Surface Mount 8-SO
IRF7353D2PBF

IRF7353D2PBF

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies

5,347
IRF7353D2PBF

Технический лист

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 29mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO

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