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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRF7466PBF

IRF7466PBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies

4,469
IRF7466PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2100 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7452PBF

IRF7452PBF

MOSFET N-CH 100V 4.5A 8SO

Infineon Technologies

4,301
IRF7452PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 10V 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7807VD2PBF

IRF7807VD2PBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

6,101
IRF7807VD2PBF

Технический лист

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
SI4420DYPBF

SI4420DYPBF

MOSFET N-CH 30V 12.5A 8SO

Infineon Technologies

7,603
SI4420DYPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9mOhm @ 12.5A, 10V 1V @ 250µA 78 nC @ 10 V ±20V 2240 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7475PBF

IRF7475PBF

MOSFET N-CH 12V 11A 8SO

Infineon Technologies

9,709
IRF7475PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.8V, 4.5V 15mOhm @ 8.8A, 4.5V 2V @ 250µA 19 nC @ 4.5 V ±12V 1590 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7467PBF

IRF7467PBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies

7,740
IRF7467PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 2.8V, 10V 12mOhm @ 11A, 10V 2V @ 250µA 32 nC @ 4.5 V ±12V 2530 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7490PBF

IRF7490PBF

MOSFET N-CH 100V 5.4A 8SO

Infineon Technologies

7,574
IRF7490PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 100 V 5.4A (Ta) 10V 39mOhm @ 3.2A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1720 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7420PBF

IRF7420PBF

MOSFET P-CH 12V 11.5A 8SO

Infineon Technologies

4,651
IRF7420PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7464PBF

IRF7464PBF

MOSFET N-CH 200V 1.2A 8SO

Infineon Technologies

6,531
IRF7464PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1.2A (Ta) 10V 730mOhm @ 720mA, 10V 5.5V @ 250µA 14 nC @ 10 V ±30V 280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7807APBF

IRF7807APBF

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

8,701
IRF7807APBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFB4610

IRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies

5,916
IRFB4610

Технический лист

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF7413PBF

IRF7413PBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies

9,474
IRF7413PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7205PBF

IRF7205PBF

MOSFET P-CH 30V 4.6A 8SO

Infineon Technologies

3,626
IRF7205PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 70mOhm @ 4.6A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 870 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRL3716LPBF

IRL3716LPBF

MOSFET N-CH 20V 180A TO262

Infineon Technologies

3,708
IRL3716LPBF

Технический лист

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF7424PBF

IRF7424PBF

MOSFET P-CH 30V 11A 8SO

Infineon Technologies

5,662
IRF7424PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7453PBF

IRF7453PBF

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies

7,185
IRF7453PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7456PBF

IRF7456PBF

MOSFET N-CH 20V 16A 8SO

Infineon Technologies

8,940
IRF7456PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 62 nC @ 5 V ±12V 3640 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7450PBF

IRF7450PBF

MOSFET N-CH 200V 2.5A 8SO

Infineon Technologies

5,147
IRF7450PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7460PBF

IRF7460PBF

MOSFET N-CH 20V 12A 8SO

Infineon Technologies

4,915
IRF7460PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 2050 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7322D1PBF

IRF7322D1PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

7,136
IRF7322D1PBF

Технический лист

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO

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