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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
JANSR2N7389

JANSR2N7389

MOSFET P-CH 100V 6.5A TO205AF

Microsemi Corporation

5,264
JANSR2N7389

Технический лист

- TO-205AF Metal Can Tray Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Military MIL-PRF-19500/630 Through Hole TO-205AF (TO-39)
JANSR2N7262U

JANSR2N7262U

MOSFET N-CH 200V 5.5A 18ULCC

Microsemi Corporation

8,950
JANSR2N7262U

Технический лист

- 18-CLCC Tray Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 12V 364mOhm @ 5.5A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Military MIL-PRF-19500/601 Surface Mount 18-ULCC (9.14x7.49)
APTM50UM13SAG

APTM50UM13SAG

MOSFET N-CH 500V 335A SP6

Microchip Technology

2,962
APTM50UM13SAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 335A (Tc) 10V 15mOhm @ 167.5A, 10V 5V @ 20mA 800 nC @ 10 V ±30V 42200 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100UM65DAG

APTM100UM65DAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology

9,959
APTM100UM65DAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120U10SAG

APTM120U10SAG

MOSFET N-CH 1200V 116A SP6

Microchip Technology

6,912
APTM120U10SAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
JANSR2N7261U

JANSR2N7261U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation

2,680
JANSR2N7261U

Технический лист

- 18-CLCC Tray Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 12V 185mOhm @ 8A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Military MIL-PRF-19500/601 Surface Mount 18-ULCC (9.14x7.49)
APTM100UM65SAG

APTM100UM65SAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology

6,666
APTM100UM65SAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
JANSR2N7380

JANSR2N7380

MOSFET N-CH 100V 14.4A TO257

Microsemi Corporation

7,291
JANSR2N7380

Технический лист

- TO-257-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14.4A (Tc) 12V 200mOhm @ 14.4A, 12V 4V @ 1mA 40 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Military MIL-PRF-19500/614 Through Hole TO-257
APTM20UM03FAG

APTM20UM03FAG

MOSFET N-CH 200V 580A SP6

Microchip Technology

6,457
APTM20UM03FAG

Технический лист

POWER MOS 7® SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.6mOhm @ 290A, 10V 5V @ 15mA 840 nC @ 10 V ±30V 43300 pF @ 25 V - 2270W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM10UM01FAG

APTM10UM01FAG

MOSFET N-CH 100V 860A SP6

Microchip Technology

8,412
APTM10UM01FAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 860A (Tc) 10V 1.6mOhm @ 275A, 10V 4V @ 12mA 2100 nC @ 10 V ±30V 60000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
2N6661JTX02

2N6661JTX02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

4,689
2N6661JTX02

Технический лист

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
JANSR2N7381

JANSR2N7381

MOSFET N-CH 200V 9.4A TO257

Microsemi Corporation

4,210
JANSR2N7381

Технический лист

- TO-257-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 12V 490mOhm @ 9.4A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Military MIL-PRF-19500/614 Through Hole TO-257
JANSR2N7389U

JANSR2N7389U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation

4,983
JANSR2N7389U

Технический лист

- 18-CLCC Tray Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Military MIL-PRF-19500/630 Surface Mount 18-ULCC (9.14x7.49)
APTM100UM60FAG

APTM100UM60FAG

MOSFET N-CH 1000V 129A SP6

Microchip Technology

2,284
APTM100UM60FAG

Технический лист

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 129A (Tc) 10V 70mOhm @ 64.5A, 10V 5V @ 15mA 1116 nC @ 10 V ±30V 31100 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
2N6661JTXP02

2N6661JTXP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

2,473
2N6661JTXP02

Технический лист

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
JANTXV2N6898

JANTXV2N6898

MOSFET P-CHANNEL 100V 25A TO3

Microsemi Corporation

3,514

-

- TO-204AA, TO-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 200mOhm @ 15.8A, 10V 4V @ 250µA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Military - Through Hole TO-3
JANSR2N7292

JANSR2N7292

25A, 100V, 0.070 OHM, RAD HARD,

Harris Corporation

1
JANSR2N7292

Технический лист

- TO-254-3, TO-254AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 70mOhm @ 20A, 10V 5V @ 1mA 552 nC @ 20 V ±20V - - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-254AA
APTM120U10SCAVG

APTM120U10SCAVG

MOSFET N-CH 1200V 116A SP6

Microchip Technology

8,149
APTM120U10SCAVG

Технический лист

POWER MOS 7® SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
2N6661JTVP02

2N6661JTVP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

4,205
2N6661JTVP02

Технический лист

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
JANTX2N6898

JANTX2N6898

MOSFET P-CHANNEL 100V 25A TO3

Microsemi Corporation

2,579

-

- TO-204AA, TO-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 200mOhm @ 15.8A, 10V 4V @ 250µA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Military - Through Hole TO-3

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