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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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G2R120MT33J-TR3300V 120M TO-263-7 G2R SIC MOSF |
3,585 |
|
Технический лист |
LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 33A (Tc) | 20V | 156mOhm @ 15A, 20V | 3.5V @ 4mA | 130 nC @ 20 V | +20V, -5V | 3009 pF @ 1000 V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
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MCB60I1200TZ-TUBSICFET N-CH 1.2KV 90A TO268AA |
9,441 |
|
Технический лист |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 160 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268AA (D3Pak-HV) |
|
G2R120MT33JSIC MOSFET N-CH TO263-7 |
2,452 |
|
Технический лист |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | +25V, -10V | 3706 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
APTM20UM09SGMOSFET N-CH 200V 195A MODULE |
5,937 |
|
Технический лист |
- | J3 Module | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 200 V | 195A (Tc) | 10V | 9mOhm @ 74.5A, 10V | 5V @ 4mA | 217 nC @ 10 V | ±30V | 12300 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
APT10026JLLMOSFET N-CH 1000V 30A ISOTOP |
4,331 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
VQ1004PMOSFET N-CH 60V 0.4A TO-205 |
9,841 |
|
- |
- | - | Tube | Obsolete | - | - | - | 830mA (Ta) | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
|
VQ1004P-E3MOSFET N-CH 60V 0.4A TO-205 |
2,214 |
|
- |
- | - | Tube | Obsolete | - | - | - | 830mA (Ta) | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
APT10021JLLMOSFET N-CH 1000V 37A ISOTOP |
3,549 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT10026JFLLMOSFET N-CH 1000V 30A ISOTOP |
9,102 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APTM20SKM05GMOSFET N-CH 200V 317A SP6 |
8,866 |
|
Технический лист |
- | SP6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 317A (Tc) | 10V | 6mOhm @ 158.5A, 10V | 5V @ 10mA | 448 nC @ 10 V | ±30V | 27400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM50UM25SGMOSFET N-CH 500V 149A MODULE |
7,022 |
|
Технический лист |
- | J3 Module | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 500 V | 149A (Tc) | 10V | 25mOhm @ 74.5A, 10V | 5V @ 10mA | 364 nC @ 10 V | ±30V | 17500 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
APTM100U13SGMOSFET N-CH 1000V 65A MODULE |
6,514 |
|
Технический лист |
- | J3 Module | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 1000 V | 65A (Tc) | 10V | 145mOhm @ 32.5A, 10V | 4V @ 10mA | 2000 nC @ 10 V | ±30V | 31600 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
APTM20UM05SGMOSFET N-CH 200V 317A MODULE |
9,502 |
|
Технический лист |
- | J3 Module | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 200 V | 317A (Tc) | 10V | 5mOhm @ 158.5A, 10V | 5V @ 10mA | 448 nC @ 10 V | ±30V | 27400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
|
APTM50UM19SGMOSFET N-CH 500V 163A MODULE |
9,970 |
|
Технический лист |
- | J3 Module | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 500 V | 163A (Tc) | 10V | 19mOhm @ 81.5A, 10V | 5V @ 10mA | 492 nC @ 10 V | ±30V | 22400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
2N6661-2MOSFET N-CH 90V 860MA TO39 |
3,346 |
|
Технический лист |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
|
VP0808B-2MOSFET P-CH 80V 880MA TO39 |
8,818 |
|
Технический лист |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80 V | 880mA (Ta) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 6.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
|
VQ1004P-2MOSFET N-CH 60V 0.4A TO-205 |
8,054 |
|
- |
- | - | Tube | Obsolete | - | - | - | - | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
|
APT12031JFLLMOSFET N-CH 1200V 30A ISOTOP |
3,818 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 330mOhm @ 15A, 10V | 5V @ 5mA | 365 nC @ 10 V | ±30V | 9480 pF @ 25 V | - | 690AW (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IRFM460MOSFET N-CH 500V 19A TO254AA |
8,926 |
|
Технический лист |
HEXFET® | TO-254-3, TO-254AA (Straight Leads) | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 250W (Tc) | - | - | - | Through Hole | TO-254AA |
|
|
APTM100DA18TGMOSFET N-CH 1000V 43A SP4 |
7,176 |
|
Технический лист |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 43A (Tc) | 10V | 210mOhm @ 21.5A, 10V | 5V @ 5mA | 372 nC @ 10 V | ±30V | 10400 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
