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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTC60SKM24T1GMOSFET N-CH 600V 95A SP1 |
4,957 |
|
Технический лист |
CoolMOS™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
APT30M19JVRMOSFET N-CH 300V 130A ISOTOP |
9,616 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT10026L2FLLGMOSFET N-CH 1000V 38A 264 MAX |
7,207 |
|
Технический лист |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | - | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Through Hole | 264 MAX™ [L2] |
|
MCB60I1200TZ1200V 90A SIC POWER MOSFET |
5,189 |
|
Технический лист |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 160 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268AA (D3Pak-HV) |
|
GA16JT17-247TRANS SJT 1700V 16A TO247AB |
2,326 |
|
Технический лист |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
APT20M11JFLLMOSFET N-CH 200V 176A ISOTOP |
2,064 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 176A (Tc) | - | 11mOhm @ 88A, 10V | 5V @ 5mA | 180 nC @ 10 V | - | 10320 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
GA50JT12-247TRANS SJT 1200V 100A TO247AB |
9,341 |
|
Технический лист |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
GA50JT12-263TRANSISTOR 1200V 100A TO263-7 |
6,512 |
|
- |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT8015JVRMOSFET N-CH 800V 44A ISOTOP |
2,539 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | - | 17650 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APTM100DA18CT1GMOSFET N-CH 1000V 40A SP1 |
7,158 |
|
- |
POWER MOS 8™ | SP1 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 40A (Tc) | 10V | 216mOhm @ 33A, 10V | 5V @ 2.5mA | 570 nC @ 10 V | ±30V | 14800 pF @ 25 V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
2N6660-2MOSFET N-CH 60V 990MA TO205AD |
2,173 |
|
Технический лист |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
|
|
APT20M11JVFRMOSFET N-CH 200V 175A ISOTOP |
3,393 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT60M75JVRMOSFET N-CH 600V 62A ISOTOP |
8,447 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 62A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | ±30V | 19800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT30M19JVFRMOSFET N-CH 300V 130A ISOTOP |
6,057 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT8015JVFRMOSFET N-CH 800V 44A ISOTOP |
2,942 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | - | 17650 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
APTM120DA30CT1GMOSFET N-CH 1200V 31A SP1 |
2,539 |
|
Технический лист |
POWER MOS 8™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 14560 pF @ 25 V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
|
APTC60DAM24CT1GMOSFET N-CH 600V 95A SP4 |
9,871 |
|
- |
CoolMOS™ | SP4 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
|
APTC60SKM24CT1GMOSFET N-CH 600V 95A SP1 |
7,737 |
|
Технический лист |
CoolMOS™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
|
APT50M38JFLLMOSFET N-CH 500V 88A ISOTOP |
7,075 |
|
Технический лист |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | - | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | - | 12000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT10025JVFRMOSFET N-CH 1000V 34A ISOTOP |
2,162 |
|
Технический лист |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
