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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM20DAM08TGMOSFET N-CH 200V 208A SP4 |
7,102 |
|
Технический лист |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
|
APTM20SKM08TGMOSFET N-CH 200V 208A SP4 |
3,985 |
|
Технический лист |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
|
APTM10DAM05TGMOSFET N-CH 100V 278A SP4 |
4,620 |
|
Технический лист |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 278A (Tc) | 10V | 5mOhm @ 125A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
|
APTM10SKM05TGMOSFET N-CH 100V 278A SP4 |
9,145 |
|
Технический лист |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 278A (Tc) | 10V | 5mOhm @ 125A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
VMO1200-01FMOSFET N-CH 100V 1220A Y3-LI |
5,864 |
|
- |
HiPerFET™ | Y3-Li | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1220A (Tc) | 10V | 1.35mOhm @ 932A, 10V | 4V @ 64mA | 2520 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-Li |
|
|
VM0550-2FMOSFET N-CH 100V 590A MODULE |
7,888 |
|
- |
HiPerFET™ | Module | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 590A (Tc) | - | 2.1mOhm @ 500mA, 10V | - | 2000 nC @ 10 V | - | 50000 pF @ 25 V | - | 2200W | - | - | - | Chassis Mount | Module |
|
VMO580-02FMOSFET N-CH 200V 580A Y3-LI |
3,845 |
|
- |
HiPerFET™ | Y3-Li | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 580A (Tc) | 10V | 3.8mOhm @ 430A, 10V | 4V @ 50mA | 2750 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-Li |
|
|
APTM120DA15GMOSFET N-CH 1200V 60A SP6 |
9,564 |
|
Технический лист |
- | SP6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 60A (Tc) | 10V | 175mOhm @ 30A, 10V | 5V @ 10mA | 748 nC @ 10 V | ±30V | 20600 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
APTM120SK15GMOSFET N-CH 1200V 60A SP6 |
2,287 |
|
Технический лист |
- | SP6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 60A (Tc) | 10V | 175mOhm @ 30A, 10V | 5V @ 10mA | 748 nC @ 10 V | ±30V | 20600 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
GA100JT12-227TRANS SJT 1200V 160A SOT227 |
4,741 |
|
- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
VMO1600-02PMOSFET N-CH 200V 1900A Y3-LI |
6,845 |
|
Технический лист |
PolarHT™ | Y3-Li | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 1900A (Tc) | 10V | 1.7mOhm @ 1600A, 10V | 5V @ 5mA | 2900 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-Li |
|
2N6660JTVP02MOSFET N-CH 60V 990MA TO205AD |
2,002 |
|
Технический лист |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
|
GA50JT17-247TRANS SJT 1700V 100A TO247 |
3,478 |
|
Технический лист |
- | TO-247-3 | Tube | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247 |
|
APTC60DAM18CTGMOSFET N-CH 600V 143A SP4 |
9,381 |
|
Технический лист |
CoolMOS™ | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 143A (Tc) | 10V | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 833W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
|
APTM120UM95FAGMOSFET N-CH 1200V 103A SP6 |
2,474 |
|
Технический лист |
- | SP6 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 103A (Tc) | 10V | 114mOhm @ 51.5A, 10V | 5V @ 15mA | 1122 nC @ 10 V | ±30V | 30900 pF @ 25 V | - | 2272W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
|
2N7636-GATRANS SJT 650V 4A TO276 |
6,228 |
|
- |
- | TO-276AA | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | - | - | Surface Mount | TO-276 |
|
|
DDB2U80N12W3RFC39BPSA1EASY STANDARD PLUS |
5,718 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7635-GATRANS SJT 650V 4A TO257 |
7,908 |
|
- |
- | TO-257-3 | Bulk | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | - | - | Through Hole | TO-257 |
|
|
2N6660JTXP02MOSFET N-CH 60V 990MA TO205AD |
4,383 |
|
Технический лист |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
|
|
APTM50DAM19GMOSFET N-CH 500V 163A SP6 |
4,195 |
|
Технический лист |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 163A (Tc) | 10V | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | 492 nC @ 10 V | ±30V | 22400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
