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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT20M18B2VRGMOSFET N-CH 200V 100A T-MAX |
4,792 |
|
Технический лист |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
APT20M18LVRGMOSFET N-CH 200V 100A TO264 |
7,804 |
|
Технический лист |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
FA57SA50LCMOSFET N-CH 500V 57A SOT-227 |
6,645 |
|
- |
HEXFET® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | 10V | 80mOhm @ 34A, 10V | 4V @ 250µA | 338 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXFL34N100MOSFET N-CH 1000V 30A ISOPLUS264 |
7,816 |
|
Технический лист |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 280mOhm @ 30A, 10V | 5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 550W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
|
APT10078BFLLGMOSFET N-CH 1000V 14A TO247 |
9,143 |
|
Технический лист |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | - | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | - | 2525 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
|
SICW021N120P4-BPSIC MOSFET,TO-247-4L |
4,270 |
|
Технический лист |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 29.4mOhm @ 50A, 18V | 4.5V @ 17mA | 200 nC @ 18 V | +18V, -5V | 3741 pF @ 800 V | - | 469W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXFN23N100MOSFET N-CH 1000V 23A SOT-227B |
7,921 |
|
Технический лист |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | - | 5V @ 8mA | - | ±20V | - | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXFB170N30PMOSFET N-CH 300V 170A PLUS264 |
8,795 |
|
Технический лист |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 170A (Tc) | 10V | 18mOhm @ 85A, 10V | 4.5V @ 1mA | 258 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
|
IXFN34N80MOSFET N-CH 800V 34A SOT-227B |
2,211 |
|
Технический лист |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 240mOhm @ 500mA, 10V | 5V @ 8mA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTH44N25L2MOSFET N-CH 250V 44A TO247 |
6,672 |
|
Технический лист |
Linear L2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 75mOhm @ 22A, 10V | 4.5V @ 250µA | 256 nC @ 10 V | ±20V | 5740 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
APT60N60SCSGMOSFET N-CH 600V 60A D3PAK |
8,727 |
|
Технический лист |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
|
APT44F80LMOSFET N-CH 800V 47A TO264 |
5,618 |
|
Технический лист |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 47A (Tc) | 10V | 240mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
|
IGLD60R070D1AUMA1GANFET N-CH 600V 15A LSON-8 |
7,911 |
|
Технический лист |
CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
|
|
IXFL70N60Q2MOSFET N-CH 600V 37A ISOPLUS264 |
4,702 |
|
- |
HiPerFET™, Q2 Class | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 92mOhm @ 35A, 10V | 5.5V @ 8mA | 265 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
|
|
APT40M70LVRGMOSFET N-CH 400V 57A TO264 |
5,776 |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 57A (Tc) | 10V | 70mOhm @ 28.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
|
|
APT37M100B2MOSFET N-CH 1000V 37A T-MAX |
4,776 |
|
Технический лист |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFE50N50MOSFET N-CH 500V 47A SOT227B |
4,553 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | 10V | 100mOhm @ 25A, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN64N50PD2MOSFET N-CH 500V 52A SOT-227B |
6,436 |
|
- |
PolarHV™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 52A (Tc) | 10V | 85mOhm @ 32A, 10V | 5V @ 8mA | 186 nC @ 10 V | ±30V | 11000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN48N50U2MOSFET N-CH 500V 48A SOT-227B |
8,523 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN48N50U3MOSFET N-CH 500V 48A SOT-227B |
5,306 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 500mA, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
