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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IPP065N04N GMOSFET N-CH 40V 50A TO220-3 |
2,554 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 4V @ 200µA | 34 nC @ 10 V | ±20V | 2800 pF @ 20 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP120N06S4H1AKSA1MOSFET N-CH 60V 120A TO220-3 |
9,274 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Discontinued | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270 nC @ 10 V | ±20V | 21900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N04S3H4AKSA1MOSFET N-CH 40V 80A TO220-3 |
4,711 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 4V @ 65µA | 60 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S405AKSA1MOSFET N-CH 60V 80A TO220-3 |
9,731 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S407AKSA1MOSFET N-CH 60V 80A TO220-3 |
8,525 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Discontinued | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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IPP80P03P4L04AKSA1MOSFET P-CH 30V 80A TO220-3 |
3,432 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80P03P4L07AKSA1MOSFET P-CH 30V 80A TO220-3 |
5,586 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP90N06S4L04AKSA1MOSFET N-CH 60V 90A TO220-3 |
7,632 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPS110N12N3GBKMA1MOSFET N-CH 120V 75A TO251-3 |
3,405 |
|
Технический лист |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 75A (Tc) | 10V | 11mOhm @ 75A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4310 pF @ 60 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPB031NE7N3GATMA1MOSFET N-CH 75V 100A TO263-3 |
8,131 |
|
Технический лист |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 3.8V @ 155µA | 117 nC @ 10 V | ±20V | 8130 pF @ 37.5 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SI7860ADP-T1-E3MOSFET N-CH 30V 11A PPAK SO-8 |
4,437 |
|
- |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 9.5mOhm @ 16A, 10V | 3V @ 250µA | 18 nC @ 4.5 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
2N7002EMOSFET N-CH 60V 240MA SOT23-3 |
3,795 |
|
Технический лист |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 60 V | 340mA | 4.5V, 10V | 5Ohm @ 300mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 21 pF @ 5 V | - | 350mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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STP5N95K3MOSFET N-CH 950V 4A TO220 |
3,664 |
|
Технический лист |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW13NM60NMOSFET N-CH 600V 11A TO247-3 |
4,935 |
|
Технический лист |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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EPC2001GANFET N-CH 100V 25A DIE OUTLINE |
3,682 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 100 V | 25A (Ta) | 5V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 10 nC @ 5 V | +6V, -5V | 950 pF @ 50 V | - | - | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Die |
|
EPC2010GANFET N-CH 200V 12A DIE |
9,605 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 200 V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5 nC @ 5 V | +6V, -4V | 540 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Die |
|
EPC2012GANFET N-CH 200V 3A DIE |
2,980 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 200 V | 3A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8 nC @ 5 V | +6V, -5V | 145 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | - | - | Surface Mount | Die |
|
EPC2014GANFET N-CH 40V 10A DIE OUTLINE |
8,087 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 40 V | 10A (Ta) | 5V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | +6V, -5V | 325 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
EPC2015GANFET N-CH 40V 33A DIE OUTLINE |
5,496 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 40 V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6 nC @ 5 V | +6V, -5V | 1200 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
AOT3N50MOSFET N-CH 500V 3A TO220 |
9,218 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 8 nC @ 10 V | ±30V | 331 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
