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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRF6798MTRPBF

IRF6798MTRPBF

MOSFET N-CH 25V 37A DIRECTFET

Infineon Technologies

2,661
IRF6798MTRPBF

Технический лист

HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 197A (Tc) 4.5V, 10V 1.3mOhm @ 37A, 10V 2.35V @ 150µA 75 nC @ 4.5 V ±20V 6560 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
62-0203PBF

62-0203PBF

MOSFET P-CH 12V 16A 8SO

Infineon Technologies

2,194
62-0203PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8113GPBF

IRF8113GPBF

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies

8,984
IRF8113GPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8252PBF

IRF8252PBF

MOSFET N-CH 25V 25A 8SO

Infineon Technologies

4,339
IRF8252PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8788PBF

IRF8788PBF

MOSFET N-CH 30V 24A 8SO

Infineon Technologies

8,744
IRF8788PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.35V @ 100µA 66 nC @ 4.5 V ±20V 5720 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFR1018ETRRPBF

IRFR1018ETRRPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies

4,705
IRFR1018ETRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFR3410TRRPBF

IRFR3410TRRPBF

MOSFET N-CH 100V 31A DPAK

Infineon Technologies

3,293
IRFR3410TRRPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFS4010TRRPBF

IRFS4010TRRPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

8,352
IRFS4010TRRPBF

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLR8726PBF

IRLR8726PBF

MOSFET N-CH 30V 86A DPAK

Infineon Technologies

5,878
IRLR8726PBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLR8729PBF

IRLR8729PBF

MOSFET N-CH 30V 58A D-PAK

Infineon Technologies

2,336
IRLR8729PBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLR8729TRLPBF

IRLR8729TRLPBF

MOSFET N-CH 30V 58A D-PAK

Infineon Technologies

8,048
IRLR8729TRLPBF

Технический лист

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLS3036TRRPBF

IRLS3036TRRPBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

7,233
IRLS3036TRRPBF

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLU8256PBF

IRLU8256PBF

MOSFET N-CH 25V 81A IPAK

Infineon Technologies

2,019
IRLU8256PBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 81A (Tc) 4.5V, 10V 5.7mOhm @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V 1470 pF @ 13 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRLU8259PBF

IRLU8259PBF

MOSFET N-CH 25V 57A IPAK

Infineon Technologies

2,396
IRLU8259PBF

Технический лист

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 57A (Tc) 4.5V, 10V 8.7mOhm @ 21A, 10V 2.35V @ 25µA 10 nC @ 4.5 V ±20V 900 pF @ 13 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SJ621-T1B-AT

2SJ621-T1B-AT

MOSFET P-CH 12V SC-96 SOT-23

Renesas Electronics Corporation

3,925
2SJ621-T1B-AT

Технический лист

- SC-96 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.5A (Ta) - 44mOhm @ 2A, 4.5V 1.5V @ 1mA 6.2 nC @ 4 V - 630 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
2SJ624-T1B-AT

2SJ624-T1B-AT

MOSFET P-CH 20V SC-96 SOT-23

Renesas Electronics Corporation

2,436
2SJ624-T1B-AT

Технический лист

- SC-96 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) - 54mOhm @ 2.5A, 4.5V 1.5V @ 1mA 8.1 nC @ 4 V - 813 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
2SK3479-Z-E1-AZ

2SK3479-Z-E1-AZ

MOSFET N-CH 100V 83A TO-263

Renesas Electronics Corporation

6,408
2SK3479-Z-E1-AZ

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) - 11mOhm @ 42A, 10V - 210 nC @ 10 V - 11000 pF @ 10 V - 1.5W (Ta), 125W (Tc) 150°C (TJ) - - Surface Mount TO-263, TO-220SMD
2SK3576-T1B-AT

2SK3576-T1B-AT

MOSFET N-CH 20V SC-96 SOT-23

Renesas Electronics Corporation

6,732
2SK3576-T1B-AT

Технический лист

- SC-96 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) - 50mOhm @ 2A, 4.5V 1.5V @ 1mA 3.3 nC @ 4 V - 250 pF @ 10 V - - - - - Surface Mount SC-96-3, Thin Mini Mold
UPA1815GR-9JG-E1-A

UPA1815GR-9JG-E1-A

MOSFET P-CH 20V 8-TSSOP

Renesas Electronics Corporation

4,437
UPA1815GR-9JG-E1-A

Технический лист

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) - 15mOhm @ 3.5A, 4.5V 1.5V @ 1mA 25 nC @ 4 V - 3000 pF @ 10 V - - - - - Surface Mount 8-TSSOP
UPA1917TE-T1-AT

UPA1917TE-T1-AT

MOSFET P-CH 20V SC-95

Renesas Electronics Corporation

7,990
UPA1917TE-T1-AT

Технический лист

- SC-95-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) - 53mOhm @ 3A, 4.5V 1.5V @ 1mA 8.1 nC @ 4 V - 835 pF @ 10 V - - - - - Surface Mount SC-95-6, Mini Mold Thin

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