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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
BUK9240-100A/C1,11

BUK9240-100A/C1,11

MOSFET N-CH 100V 33A DPAK

NXP USA Inc.

7,543
BUK9240-100A/C1,11

Технический лист

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 4.5V, 10V 38.6mOhm @ 25A, 10V 2V @ 1mA - ±10V 3072 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK9237-55A/C1,118

BUK9237-55A/C1,118

MOSFET N-CH 55V 32A DPAK

NXP USA Inc.

8,296
BUK9237-55A/C1,118

Технический лист

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) 4.5V, 10V 33mOhm @ 15A, 10V 2V @ 1mA 17.6 nC @ 5 V ±15V 1236 pF @ 25 V - 77W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK9222-55A/C1,118

BUK9222-55A/C1,118

MOSFET N-CH 55V 48A DPAK

NXP USA Inc.

8,851
BUK9222-55A/C1,118

Технический лист

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 48A (Tc) 4.5V, 10V 20mOhm @ 25A, 10V 2V @ 1mA - ±15V 2210 pF @ 25 V - 103W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK7210-55B/C1,118

BUK7210-55B/C1,118

MOSFET N-CH 55V 75A DPAK

NXP USA Inc.

9,369
BUK7210-55B/C1,118

Технический лист

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 35 nC @ 10 V ±20V 2453 pF @ 25 V - 167W (Tc) -55°C ~ 185°C (TJ) - - Surface Mount DPAK
2N7002CK,215

2N7002CK,215

MOSFET N-CH 60V 300MA TO236AB

Nexperia USA Inc.

2,290
2N7002CK,215

Технический лист

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 1.3 nC @ 4.5 V ±20V 55 pF @ 25 V - 350mW (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-236AB
NDD03N60ZT4G

NDD03N60ZT4G

MOSFET N-CH 600V 2.6A DPAK

onsemi

5,346
NDD03N60ZT4G

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 312 pF @ 25 V - 61W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
NTB6410ANG

NTB6410ANG

MOSFET N-CH 100V 76A D2PAK

onsemi

9,860
NTB6410ANG

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 13mOhm @ 76A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 4500 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
NTD4959N-35G

NTD4959N-35G

MOSFET N-CH 30V 9A/58A IPAK

onsemi

7,262
NTD4959N-35G

Технический лист

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 25 nC @ 11.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4959NH-35G

NTD4959NH-35G

MOSFET N-CH 30V 9A/58A IPAK

onsemi

4,731
NTD4959NH-35G

Технический лист

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 44 nC @ 11.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4963N-35G

NTD4963N-35G

MOSFET N-CH 30V 8.1A/44A IPAK

onsemi

7,870
NTD4963N-35G

Технический лист

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta), 44A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.5V @ 250µA 16.2 nC @ 10 V ±20V 1035 pF @ 12 V - 1.1W (Ta), 35.7W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4963NT4G

NTD4963NT4G

MOSFET N-CH 30V 8.1A/44A DPAK

onsemi

7,155
NTD4963NT4G

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta), 44A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.5V @ 250µA 16.2 nC @ 10 V ±20V 1035 pF @ 12 V - 1.1W (Ta), 35.7W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTMFS4897NFT3G

NTMFS4897NFT3G

MOSFET N-CH 30V 17A/171A 5DFN

onsemi

2,167
NTMFS4897NFT3G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 171A (Tc) 4.5V, 10V 2mOhm @ 22A, 10V 2.5V @ 1mA 83.6 nC @ 10 V ±20V 5660 pF @ 15 V - 950mW (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
SSM3K106TU(TE85L)

SSM3K106TU(TE85L)

MOSFET N-CH 20V 1.2A UFM

Toshiba Semiconductor and Storage

3,371
SSM3K106TU(TE85L)

Технический лист

π-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 4V, 10V 310mOhm @ 600mA, 10V 2.3V @ 100µA - ±20V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
TK13A65U(STA4,Q,M)

TK13A65U(STA4,Q,M)

MOSFET N-CH 650V 13A TO220SIS

Toshiba Semiconductor and Storage

8,355
TK13A65U(STA4,Q,M)

Технический лист

DTMOSII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage

5,662
TK4A60D(STA4,Q,M)

Технический лист

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPCC8003-H(TE12LQM

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage

9,245
TPCC8003-H(TE12LQM

Технический лист

U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8008(TE12L,QM)

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage

3,239
TPCC8008(TE12L,QM)

Технический лист

U-MOSIV 8-VDFN Exposed Pad Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
HAT1072H-EL-E

HAT1072H-EL-E

MOSFET P-CH 30V 40A LFPAK

Renesas Electronics Corporation

2,462
HAT1072H-EL-E

Технический лист

- SC-100, SOT-669 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V - 155 nC @ 10 V +10V, -20V 9500 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount LFPAK
HAT2170H-EL-E

HAT2170H-EL-E

MOSFET N-CH 40V 45A LFPAK

Renesas Electronics Corporation

8,591
HAT2170H-EL-E

Технический лист

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 7V, 10V 4.2mOhm @ 22.5A, 10V 3V @ 1mA 62 nC @ 10 V ±20V 4650 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount LFPAK
HAT2172H-EL-E

HAT2172H-EL-E

MOSFET N-CH 40V 30A LFPAK

Renesas Electronics Corporation

9,570
HAT2172H-EL-E

Технический лист

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta) 7V, 10V 7.5mOhm @ 15A, 10V 3V @ 1mA 32 nC @ 10 V ±20V 2420 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Surface Mount LFPAK

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