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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
APT10M09B2VFRG

APT10M09B2VFRG

MOSFET N-CH 100V 100A T-MAX

Microsemi Corporation

9,108
APT10M09B2VFRG

Технический лист

POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 2.5mA 350 nC @ 10 V ±30V 9875 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFK24N100

IXFK24N100

MOSFET N-CH 1KV 24A TO-264AA

IXYS

3,848
IXFK24N100

Технический лист

HiPerFET™ TO-264-3, TO-264AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IXTR90P20P

IXTR90P20P

MOSFET P-CH 200V 53A ISOPLUS247

Littelfuse Inc.

5,915
IXTR90P20P

Технический лист

PolarP™ TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 53A (Tc) 10V 48mOhm @ 45A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
APT5015SVFRG

APT5015SVFRG

MOSFET N-CH 500V 32A D3PAK

Microchip Technology

8,033
APT5015SVFRG

Технический лист

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 150mOhm @ 16A, 10V 4V @ 1mA 300 nC @ 10 V ±30V 5280 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT77N60SC6

APT77N60SC6

MOSFET N-CH 600V 77A D3PAK

Microchip Technology

4,418
APT77N60SC6

Технический лист

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
IGT40R070D1E8220ATMA1

IGT40R070D1E8220ATMA1

GAN N-CH 400V 31A HSOF-8-3

Infineon Technologies

3,991
IGT40R070D1E8220ATMA1

Технический лист

CoolGaN™ 8-PowerSFN Tape & Reel (TR) Obsolete N-Channel GaNFET (Gallium Nitride) 400 V 31A (Tc) - - 1.6V @ 2.6mA - ±10V 382 pF @ 320 V - 125W (Tc) 0°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IXFN73N30

IXFN73N30

MOSFET N-CH 300V 73A SOT-227B

IXYS

4,703
IXFN73N30

Технический лист

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 73A (Tc) 10V 45mOhm @ 500mA, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
3N163

3N163

MOSFET P-CH 40V 50MA TO72

Vishay Siliconix

9,544
3N163

Технический лист

- TO-206AF, TO-72-4 Metal Can Tube Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50mA (Ta) 20V 250Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-72
3N163-E3

3N163-E3

MOSFET P-CH 40V 50MA TO72

Vishay Siliconix

7,609
3N163-E3

Технический лист

- TO-206AF, TO-72-4 Metal Can Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50mA (Ta) 20V 250Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-72
3N164

3N164

MOSFET P-CH 30V 50MA TO72

Vishay Siliconix

7,416
3N164

Технический лист

- TO-206AF, TO-72-4 Metal Can Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50mA (Ta) 20V 300Ohm @ 100µA, 20V 5V @ 10µA - ±30V 3.5 pF @ 15 V - 375mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-72
APT70SM70S

APT70SM70S

SICFET N-CH 700V 65A D3PAK

Microsemi Corporation

4,252

-

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 65A (Tc) 20V 70mOhm @ 32.5A, 20V 2.5V @ 1mA 125 nC @ 20 V +25V, -10V - - 220W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
IMSQ120R026M2HHXUMA1

IMSQ120R026M2HHXUMA1

SIC DISCRETE

Infineon Technologies

5,011

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
APT47N60SC3G

APT47N60SC3G

MOSFET N-CH 600V 47A D3PAK

Microchip Technology

2,303
APT47N60SC3G

Технический лист

CoolMOS™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 260 nC @ 10 V ±20V 7015 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
SCTH60N120G2-7

SCTH60N120G2-7

SICFET N-CH 1200V 60A H2PAK-7

STMicroelectronics

2,479
SCTH60N120G2-7

Технический лист

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 10V 5V @ 1mA 94 nC @ 18 V +22V, -10V 1969 pF @ 800 V - 390W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-7
IRFP360LC

IRFP360LC

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix

3,489

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 3400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SCT2080KEC

SCT2080KEC

SICFET N-CH 1200V 40A TO247

Rohm Semiconductor

8,007
SCT2080KEC

Технический лист

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - 262W (Tc) 175°C (TJ) - - Through Hole TO-247
IXTX600N04T2

IXTX600N04T2

MOSFET N-CH 40V 600A PLUS247-3

Littelfuse Inc.

3,567
IXTX600N04T2

Технический лист

TrenchT2™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.5mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PLUS247™-3
APT34M60S/TR

APT34M60S/TR

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

7,817
APT34M60S/TR

Технический лист

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
IXFT12N100Q

IXFT12N100Q

MOSFET N-CH 1000V 12A TO268

IXYS

2,385
IXFT12N100Q

Технический лист

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 90 nC @ 10 V ±20V 2900 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IXFT17N80Q

IXFT17N80Q

MOSFET N-CH 800V 17A TO268

IXYS

2,473

-

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Box Obsolete N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 600mOhm @ 500mA, 10V 4.5V @ 4mA 95 nC @ 10 V ±20V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA

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