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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
APT6038SLLG

APT6038SLLG

MOSFET N-CH 600V 17A D3PAK

Microchip Technology

6,665
APT6038SLLG

Технический лист

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) - 380mOhm @ 8.5A, 10V 5V @ 1mA 43 nC @ 10 V - 1850 pF @ 25 V - - - - - Surface Mount D3PAK
IXFR180N10

IXFR180N10

MOSFET N-CH 100V 165A ISOPLUS247

IXYS

4,104
IXFR180N10

Технический лист

HiPerFET™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 165A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 400 nC @ 10 V ±20V 9400 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFQ170N15X3

IXFQ170N15X3

DISCMSFT NCHULTRJNCTN X3CLASS TO

Littelfuse Inc.

6,526
IXFQ170N15X3

Технический лист

HiPerFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 170A (Tc) 10V 6.7mOhm @ 85A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7620 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
APT10M11B2VFRG

APT10M11B2VFRG

MOSFET N-CH 100V 100A T-MAX

Microsemi Corporation

2,317
APT10M11B2VFRG

Технический лист

POWER MOS V® TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 500mA, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™
IXFK100N25

IXFK100N25

MOSFET N-CH 250V 100A TO264AA

IXYS

6,008
IXFK100N25

Технический лист

HiPerFET™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 27mOhm @ 50A, 10V 4V @ 8mA 300 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IXFR100N25

IXFR100N25

MOSFET N-CH 250V 87A ISOPLUS247

IXYS

5,090

-

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 87A (Tc) 10V 27mOhm @ 50A, 10V 4V @ 8mA 300 nC @ 10 V ±20V 9100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
APT5018SFLLG

APT5018SFLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

5,427
APT5018SFLLG

Технический лист

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) - 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V - 2596 pF @ 25 V - - - - - Surface Mount D3PAK
IXTN320N10T

IXTN320N10T

MOSFET N-CH 100V 320A SOT-227B

IXYS

9,867

-

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V - 4.5V @ 1mA - ±20V - - 680W (Tc) - - - Chassis Mount SOT-227B
IXFR150N15

IXFR150N15

MOSFET N-CH 150V 105A ISOPLUS247

IXYS

7,053

-

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 12.5mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFX20N120

IXFX20N120

MOSFET N-CH 1200V 20A PLUS247-3

IXYS

3,665

-

HiPerFET™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 750mOhm @ 500mA, 10V 4.5V @ 8mA 160 nC @ 10 V ±30V 7400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IRFP054N

IRFP054N

MOSFET N-CH 55V 81A TO247AC

Infineon Technologies

3,165
IRFP054N

Технический лист

HEXFET® TO-247-3 Bag Obsolete N-Channel MOSFET (Metal Oxide) 55 V 81A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
R6046FNZC8

R6046FNZC8

MOSFET N-CH 600V 46A TO3PF

Rohm Semiconductor

2,832
R6046FNZC8

Технический лист

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 93mOhm @ 23A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 6100 pF @ 25 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-3PF
IXFR120N20

IXFR120N20

MOSFET N-CH 200V 105A ISOPLUS247

IXYS

2,667
IXFR120N20

Технический лист

HiPerFET™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 105A (Tc) 10V 17mOhm @ 60A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
APT25SM120S

APT25SM120S

SICFET N-CH 1200V 25A D3

Microsemi Corporation

2,838

-

- D-3 Module Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 25A (Tc) - 175mOhm @ 10A, 20V 2.5V @ 1mA 72 nC @ 20 V - - - 175W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount D3
APT31N60BCSG

APT31N60BCSG

MOSFET N-CH 600V 31A TO247-3

Microsemi Corporation

4,189
APT31N60BCSG

Технический лист

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 100mOhm @ 18A, 10V 3.9V @ 1.2mA 85 nC @ 10 V ±30V 3055 pF @ 25 V - 255W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
APT5018SLLG/TR

APT5018SLLG/TR

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

2,432
APT5018SLLG/TR

Технический лист

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V ±30V 2596 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
UF4C120070B7SSB

UF4C120070B7SSB

1200V/70MO,SICFET,G4,TO263-7

Qorvo

5,594
UF4C120070B7SSB

Технический лист

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Bulk Active P-Channel SiCFET (Silicon Carbide) 1200 V 25.7A (Tj) 12V 91mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7L
IXTH64N65X

IXTH64N65X

MOSFET N-CH 650V 64A TO247

IXYS

2,674
IXTH64N65X

Технический лист

Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 51mOhm @ 32A, 10V 5V @ 250µA 143 nC @ 10 V ±30V 5500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
APT5020SVFRG

APT5020SVFRG

MOSFET N-CH 500V 26A D3PAK

Microchip Technology

2,588
APT5020SVFRG

Технический лист

POWER MOS V® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - 200mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 4440 pF @ 25 V - - - - - Surface Mount D3PAK
APT13F120S

APT13F120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology

2,918
APT13F120S

Технический лист

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.2Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK

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