Пожалуйста, свяжитесь с нами для получения актуальной информации о ценах и наличии товара.

FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IXFH6N90

IXFH6N90

MOSFET N-CH 900V 6A TO247AD

IXYS

7,119
IXFH6N90

Технический лист

HiPerFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 2Ohm @ 3A, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
STW45NM50FD

STW45NM50FD

MOSFET N-CH 500V 45A TO247-3

STMicroelectronics

9,298
STW45NM50FD

Технический лист

FDmesh™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 100mOhm @ 22.5A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 417W (Tc) -65°C ~ 150°C (TJ) - - Through Hole TO-247-3
IXFK36N60P

IXFK36N60P

MOSFET N-CH 600V 36A TO264AA

Littelfuse Inc.

7,132
IXFK36N60P

Технический лист

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 102 nC @ 10 V ±30V 5800 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT18M80B

APT18M80B

MOSFET N-CH 800V 19A TO247

Microchip Technology

5,767
APT18M80B

Технический лист

POWER MOS 8™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19A (Tc) 10V 530mOhm @ 9A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3760 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
STW48N60M2

STW48N60M2

MOSFET N-CH 600V 42A TO247

STMicroelectronics

6
STW48N60M2

Технический лист

MDmesh™ M2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 70mOhm @ 21A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 3060 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IXKC20N60C

IXKC20N60C

MOSFET N-CH 600V 15A ISOPLUS220

Littelfuse Inc.

5,438
IXKC20N60C

Технический лист

CoolMOS™ ISOPLUS220™ Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 190mOhm @ 16A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS220™
IXFT42N50P2

IXFT42N50P2

MOSFET N-CH 500V 42A TO268

IXYS

7,891
IXFT42N50P2

Технический лист

HiPerFET™, PolarP2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 42A (Tc) 10V 145mOhm @ 500mA, 10V 4.5V @ 4mA 92 nC @ 10 V ±30V 5300 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
STWA70N60DM6

STWA70N60DM6

MOSFET N-CH 600V 62A TO247

STMicroelectronics

5,142
STWA70N60DM6

Технический лист

MDmesh™ DM6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) - - - - ±25V - - - - - - Through Hole TO-247 Long Leads
TSM60NB099CF

TSM60NB099CF

600V, 38A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,036

-

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 5.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220S
IXFX62N25

IXFX62N25

MOSFET N-CH 250V 62A PLUS247-3

IXYS

6,755

-

HiPerFET™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 62A (Tc) 10V 35mOhm @ 31A, 10V 4V @ 4mA 240 nC @ 10 V ±20V 6600 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
FDB031N08

FDB031N08

MOSFET N-CH 75V 120A D2PAK

onsemi

7,667
FDB031N08

Технический лист

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.1mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
MSC180SMA120SA

MSC180SMA120SA

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology

8,073

-

- TO-263-8, D2PAK (7 Leads + Tab) Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 225mOhm @ 8A, 20V 3.26V @ 500µA 34 nC @ 20 V +23V, -10V 510 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
IXFQ80N25X3

IXFQ80N25X3

MOSFET N-CH 250V 80A TO3P

Littelfuse Inc.

7,361
IXFQ80N25X3

Технический лист

HiPerFET™, Ultra X3 TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 80A (Tc) 10V 16mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
IXFR30N60P

IXFR30N60P

MOSFET N-CH 600V 15A ISOPLUS247

Littelfuse Inc.

2,589
IXFR30N60P

Технический лист

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 250mOhm @ 15A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 3820 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFT13N80Q

IXFT13N80Q

MOSFET N-CH 800V 13A TO268

IXYS

4,863

-

HiPerFET™, Q Class TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 700mOhm @ 6.5A, 10V 4.5V @ 4mA 90 nC @ 10 V ±20V 3250 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3

MOSFET N-CH 650V 19.8A PPAK 8X8

Vishay Siliconix

6,546
SIHH21N65EF-T1-GE3

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 19.8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 102 nC @ 10 V ±30V 2396 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
TSM60NB099CZ

TSM60NB099CZ

600V, 38A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,141

-

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
STH210N75F6-2

STH210N75F6-2

MOSFET N-CH 75V 180A H2PAK-2

STMicroelectronics

3,069
STH210N75F6-2

Технический лист

DeepGATE™, STripFET™ VI TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 2.8mOhm @ 90A, 10V 4V @ 250µA 171 nC @ 10 V ±20V 11800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount H2PAK-2
FCH47N60F

FCH47N60F

MOSFET N-CH 600V 47A TO247-3

onsemi

4,921
FCH47N60F

Технический лист

SuperFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 73mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SPW47N65C3FKSA1

SPW47N65C3FKSA1

MOSFET N-CH 650V 47A TO247-3

Infineon Technologies

5,397
SPW47N65C3FKSA1

Технический лист

CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 255 nC @ 10 V ±20V 7000 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1

Начать сейчас!

Получайте последние новости

EASTECH Electronics

Главная

EASTECH Electronics

Поиск

EASTECH Electronics

Продукты

EASTECH Electronics

Whatsapp

Отправка...
×
Отправлено успешно!
Спасибо за вашу заявку. Наши сотрудники отдела продаж получат ваш запрос и свяжутся с вами в течение 12 часов с коммерческим предложением.