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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
STWA68N65DM6AG

STWA68N65DM6AG

DISCRETE

STMicroelectronics

3,601

-

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 72A (Tc) 10V 39mOhm @ 36A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5900 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
SIHH21N60EF-T1-GE3

SIHH21N60EF-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix

4,506
SIHH21N60EF-T1-GE3

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 185mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 2035 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IXTR36P15P

IXTR36P15P

MOSFET P-CH 150V 22A ISOPLUS247

Littelfuse Inc.

9,725
IXTR36P15P

Технический лист

PolarP™ TO-247-3 Tube Active P-Channel MOSFET (Metal Oxide) 150 V 22A (Tc) 10V 120mOhm @ 18A, 10V 5V @ 250µA 55 nC @ 10 V ±20V 2950 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS247™
IRFPE40

IRFPE40

MOSFET N-CH 800V 5.4A TO247-3

Vishay Siliconix

9,107
IRFPE40

Технический лист

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 2Ohm @ 3.2A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
STB75N20

STB75N20

MOSFET N-CH 200V 75A D2PAK

STMicroelectronics

6,361
STB75N20

Технический лист

STripFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 75A (Tc) 10V 34mOhm @ 37A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 3260 pF @ 25 V - 190W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount D2PAK
IXTA30N25L2

IXTA30N25L2

MOSFET N-CH 250V 30A TO263

Littelfuse Inc.

2,484
IXTA30N25L2

Технический лист

Linear L2™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 140mOhm @ 15A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 3200 pF @ 25 V - 355W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
DMWSH120H90SCT7Q

DMWSH120H90SCT7Q

LINEAR IC

Diodes Incorporated

7,337

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 38.2A (Tc) 15V 90mOhm @ 20A, 15V 3.5V @ 5mA 54.6 nC @ 15 V +19V, -8V 1078 pF @ 1000 V - 197W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
NDCTR2065A

NDCTR2065A

MOSFET N-CH 650V 20A SMD

onsemi

3,233

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFP4368PBF

IRFP4368PBF

MOSFET N-CH 75V 195A TO247AC

Infineon Technologies

8,156
IRFP4368PBF

Технический лист

HEXFET® TO-247-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 1.85mOhm @ 195A, 10V 4V @ 250µA 570 nC @ 10 V ±20V 19230 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IPB65R110CFDATMA1

IPB65R110CFDATMA1

MOSFET N-CH 650V 31.2A D2PAK

Infineon Technologies

5,079
IPB65R110CFDATMA1

Технический лист

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IXFX74N50P2

IXFX74N50P2

MOSFET N-CH 500V 74A PLUS247-3

IXYS

6,929

-

HiPerFET™, PolarHV™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 74A (Tc) 10V 77mOhm @ 500mA, 10V 5V @ 4mA 165 nC @ 10 V ±30V 9900 pF @ 25 V - 1400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
DMWSH120H80SM4

DMWSH120H80SM4

LINEAR IC

Diodes Incorporated

9,410

-

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 44.5A (Tc) 15V, 18V 80.5mOhm @ 20A, 18V 3.5V @ 5mA 59.1 nC @ 18 V +22V, -10V 1069 pF @ 1000 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H80SM3

DMWSH120H80SM3

LINEAR IC

Diodes Incorporated

8,260

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 44.5A (Tc) 15V, 18V 80.5mOhm @ 20A, 18V 3.5V @ 5mA 59.1 nC @ 18 V +22V, -10V 1069 pF @ 1000 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
AOK66518

AOK66518

LINEAR IC

Alpha & Omega Semiconductor Inc.

3,074

-

AlphaSGT™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Ta), 120A (Tc) 8V, 10V 5.4mOhm @ 20A, 10V 3.7V @ 250µA 115 nC @ 10 V ±20V 6460 pF @ 75 V - 18W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
AOK040A60

AOK040A60

N

Alpha & Omega Semiconductor Inc.

4,590
AOK040A60

Технический лист

aMOS5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 40mOhm @ 25A, 10V 3.6V @ 250µA 175 nC @ 10 V ±20V 9320 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
AUIRFS8409TRL

AUIRFS8409TRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

5
AUIRFS8409TRL

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
MSC280SMA120S

MSC280SMA120S

SICFET N-CH 1.2KV D3PAK

Microsemi Corporation

3,728
MSC280SMA120S

Технический лист

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
UF4C120070B7SSR

UF4C120070B7SSR

1200V/70MO,SICFET,G4,TO263-7

Qorvo

2,870
UF4C120070B7SSR

Технический лист

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Bulk Active P-Channel SiCFET (Silicon Carbide) 1200 V 25.7A (Tj) 12V 91mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7L
SICW020N065H-BP

SICW020N065H-BP

SIC MOSFETS,TO-247AB

Micro Commercial Co

9,166

-

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 650 V 107A (Tc) 20V 26mOhm @ 50A, 20V 4.5V @ 50mA 287 nC @ 20 V +25V, -10V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
FDB0105N407L

FDB0105N407L

MOSFET N-CH 40V 460A TO263-7

onsemi

3,222
FDB0105N407L

Технический лист

PowerTrench® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 460A (Tc) 6V, 10V 0.8mOhm @ 50A, 10V 4V @ 250µA 291 nC @ 10 V ±20V 23100 pF @ 20 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7

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