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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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AOB270LMOSFET N-CH 75V 21.5A/140A TO263 |
4,306 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.3mOhm @ 20A, 10V | 3V @ 250µA | 215 nC @ 10 V | ±20V | 10350 pF @ 37.5 V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
AOV20S60MOSFET N-CH 600V 3.6A/18A 4DFN |
6,131 |
|
Технический лист |
aMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Ta), 18A (Tc) | 10V | 250mOhm @ 10A, 10V | 4.1V @ 250µA | 20 nC @ 10 V | ±30V | 1038 pF @ 100 V | - | 8.3W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |
|
STW25NM50NMOSFET N-CH 500V 22A TO247-3 |
7,737 |
|
Технический лист |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2565 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
STW75NF30MOSFET N-CH 300V 60A TO247-3 |
2,293 |
|
- |
STripFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4V @ 250µA | 164 nC @ 10 V | ±20V | 5930 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IXFC13N50MOSFET N-CH 500V 12A ISOPLUS220 |
2,255 |
|
- |
HiPerFET™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 2.5mA | 120 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
IRFBF30SMOSFET N-CH 900V 3.6A D2PAK |
2,396 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
APT7F100BMOSFET N-CH 1000V 7A TO247 |
3,218 |
|
Технический лист |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 2Ohm @ 4A, 10V | 5V @ 500µA | 58 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
IXFH28N60X3DISCRETE MOSFET 28A 600V X3 TO24 |
6,899 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPC302N20N3X1SA1MOSFET N-CH 200V 1A SAWN ON FOIL |
6,843 |
|
Технический лист |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 260µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
|
IRFB9N65APBFMOSFET N-CH 650V 8.5A TO220AB |
15 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.5A (Tc) | 10V | 930mOhm @ 5.1A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 1417 pF @ 25 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIE808DF-T1-E3MOSFET N-CH 20V 60A 10POLARPAK |
3,517 |
|
Технический лист |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 3V @ 250µA | 155 nC @ 10 V | ±20V | 8800 pF @ 10 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
|
|
SIE818DF-T1-E3MOSFET N-CH 75V 60A 10POLARPAK |
3,056 |
|
Технический лист |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 60A (Tc) | 4.5V, 10V | 9.5mOhm @ 16A, 10V | 3V @ 250µA | 95 nC @ 10 V | ±20V | 3200 pF @ 38 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
|
|
SIE818DF-T1-GE3MOSFET N-CH 75V 60A 10POLARPAK |
2,730 |
|
Технический лист |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 60A (Tc) | 4.5V, 10V | 9.5mOhm @ 16A, 10V | 3V @ 250µA | 95 nC @ 10 V | ±20V | 3200 pF @ 38 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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TSM80N950CP ROGMOSFET N-CHANNEL 800V 6A TO252 |
2,482 |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
NVMFS5A160PLZWFT1GMOSFET P-CH 60V 15A/100A 5DFN |
2,223 |
|
Технический лист |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 7.7mOhm @ 50A, 10V | 2.6V @ 1mA | 160 nC @ 10 V | ±20V | 7700 pF @ 20 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
|
EPC2619ENGRTTRANS GAN 80V .0033OHM 6LGA |
9,667 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 100 V | 29A (Ta) | 5V | 3.3mOhm @ 16A, 5V | 2.5V @ 5.5mA | 8.3 nC @ 5 V | +6V, -4V | 1180 pF @ 50 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
2SK4126MOSFET N-CH 650V 15A TO3PB |
7,666 |
|
Технический лист |
- | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 720mOhm @ 6A, 10V | - | 45.4 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2.5W (Ta), 170W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3PB |
|
IRFBA1404PMOSFET N-CH 40V 206A SUPER-220 |
7,331 |
|
Технический лист |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
|
IXFC14N80PMOSFET N-CH 800V 8A ISOPLUS220 |
3,658 |
|
Технический лист |
HiPerFET™, PolarHT™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 770mOhm @ 7A, 10V | 5.5V @ 4mA | 61 nC @ 10 V | ±30V | 3900 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
IRF6646TR1PBFMOSFET N-CH 80V 12A DIRECTFET |
2,299 |
|
Технический лист |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2060 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
