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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
FQB8N90CTM

FQB8N90CTM

MOSFET N-CH 900V 6.3A D2PAK

onsemi

9,637
FQB8N90CTM

Технический лист

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPDQ60R055CFD7XTMA1

IPDQ60R055CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

8,863

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Surface Mount PG-HDSOP-22-1
IXFQ26N50P3

IXFQ26N50P3

MOSFET N-CH 500V 26A TO3P

Littelfuse Inc.

5,408
IXFQ26N50P3

Технический лист

HiPerFET™, Polar3™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
BSC020N025S G

BSC020N025S G

MOSFET N-CH 25V 30A/100A TDSON

Infineon Technologies

6,448
BSC020N025S G

Технический лист

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 110µA 66 nC @ 5 V ±20V 8290 pF @ 15 V - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
SI4890DY-T1-E3

SI4890DY-T1-E3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix

6,019
SI4890DY-T1-E3

Технический лист

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V 800mV @ 250µA (Min) 20 nC @ 5 V ±25V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFS4321TRL7PP

IRFS4321TRL7PP

MOSFET N-CH 150V 86A D2PAK-7

Infineon Technologies

8,749
IRFS4321TRL7PP

Технический лист

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 86A (Tc) 10V 14.7mOhm @ 34A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
STWA32N65DM6AG

STWA32N65DM6AG

DISCRETE

STMicroelectronics

7,688

-

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 37A (Tc) 10V 97mOhm @ 18.5A, 10V 4.75V @ 250µA 52.6 nC @ 10 V ±25V 2211 pF @ 100 V - 320W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
GT042P06M

GT042P06M

MOSFET P-CH 60V 160A 280W 4.5M(M

Goford Semiconductor

2,197

-

SGT - Active P-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 10V 4.5mOhm @ 15A, 10V 3V @ 250µA 305 nC @ 10 V 20V 9389 pF @ 30 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
IXFP220N06T3

IXFP220N06T3

MOSFET N-CH 60V 220A TO220AB

IXYS

9,919
IXFP220N06T3

Технический лист

HiperFET™, TrenchT3™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 8500 pF @ 25 V - 440W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
NVMFS5C404NLAFT3G

NVMFS5C404NLAFT3G

MOSFET N-CH 40V 370A 5DFN

onsemi

9,006
NVMFS5C404NLAFT3G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.67mOhm @ 50A, 10V 2V @ 250µA 81 nC @ 4.5 V ±20V 12168 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
2SK4171

2SK4171

MOSFET N-CH 60V 100A TO220-3

onsemi

5,271
2SK4171

Технический лист

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4V, 10V 7.2mOhm @ 50A, 10V - 135 nC @ 10 V ±20V 6900 pF @ 20 V - 1.75W (Ta), 75W (Tc) 150°C (TJ) - - Through Hole TO-220-3
IRFBA1404

IRFBA1404

MOSFET N-CH 40V 206A SUPER-220

Infineon Technologies

5,341
IRFBA1404

Технический лист

HEXFET® TO-273AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Ta) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) - - - Through Hole SUPER-220™ (TO-273AA)
STI25NM60ND

STI25NM60ND

MOSFET N-CH 600V 21A I2PAK

STMicroelectronics

8,889

-

FDmesh™ II TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) - - Through Hole I2PAK
BUK969R3-100E,118

BUK969R3-100E,118

MOSFET N-CH 100V 100A D2PAK

Nexperia USA Inc.

2,424
BUK969R3-100E,118

Технический лист

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 5V, 10V 8.9mOhm @ 25A, 10V 2.1V @ 1mA 94.3 nC @ 5 V ±10V 11650 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
IXFP44N25X3

IXFP44N25X3

MOSFET N-CH 250V 44A TO220AB

Littelfuse Inc.

7,455
IXFP44N25X3

Технический лист

HiPerFET™, Ultra X3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 40mOhm @ 22A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2200 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IXTA270N04T4

IXTA270N04T4

MOSFET N-CH 40V 270A TO263AA

IXYS

4,003
IXTA270N04T4

Технический лист

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 270A (Tc) 10V 2.2mOhm @ 50A, 10V 4V @ 250µA 182 nC @ 10 V ±15V 9140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
IXTA270N04T4-7

IXTA270N04T4-7

MOSFET N-CH 40V 270A TO263-7

IXYS

3,649
IXTA270N04T4-7

Технический лист

Trench TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 270A (Tc) 10V 2.2mOhm @ 50A, 10V 4V @ 250µA 182 nC @ 10 V ±15V 9140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7 (IXTA)
BUK962R6-40E,118

BUK962R6-40E,118

MOSFET N-CH 40V 100A D2PAK

Nexperia USA Inc.

4,236
BUK962R6-40E,118

Технический лист

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V, 10V 2.4mOhm @ 25A, 10V 2.1V @ 250µA 80.6 nC @ 32 V ±10V 10285 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
STFW6N120K3

STFW6N120K3

MOSFET N-CH 1200V 6A ISOWATT

STMicroelectronics

8,235
STFW6N120K3

Технический лист

SuperMESH3™ TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 2.5A, 10V 5V @ 100µA 34 nC @ 10 V ±30V 1050 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PF
IRF9640S

IRF9640S

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix

2,469
IRF9640S

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)

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