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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRFBA22N50APBF

IRFBA22N50APBF

MOSFET N-CH 500V 24A SUPER-220

Vishay Siliconix

2,053
IRFBA22N50APBF

Технический лист

- Super-220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 230mOhm @ 13.8A, 10V 4V @ 250µA 115 nC @ 10 V ±30V 3400 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-220™ (TO-273AA)
IXTH300N04T2

IXTH300N04T2

MOSFET N-CH 40V 300A TO247

Littelfuse Inc.

6,490
IXTH300N04T2

Технический лист

TrenchT2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 50A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247 (IXTH)
TSM60NB190CM2

TSM60NB190CM2

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,292

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
BSC105N10LSFGATMA1

BSC105N10LSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

Infineon Technologies

3,988
BSC105N10LSFGATMA1

Технический лист

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11.4A (Ta), 90A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2.4V @ 110µA 53 nC @ 10 V ±20V 3900 pF @ 50 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
IXTT50P085

IXTT50P085

MOSFET P-CH 85V 50A TO268

IXYS

9,065

-

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 85 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
APT12M80B

APT12M80B

MOSFET N-CH 800V 13A TO247

Microchip Technology

7,362
APT12M80B

Технический лист

POWER MOS 8™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 800mOhm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2470 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
STWA38N65DM6AG

STWA38N65DM6AG

DISCRETE

STMicroelectronics

7,617

-

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 82mOhm @ 21A, 10V 4.75V @ 250µA 54.4 nC @ 10 V ±25V 2805 pF @ 100 V - 347W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
SICW060N065H4-BP

SICW060N065H4-BP

SIC MOSFETS,TO-247-4

Micro Commercial Co

5,998
SICW060N065H4-BP

Технический лист

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 650 V 60A (Tc) 18V 75mOhm @ 20A, 18V 4.5V @ 20mA 121 nC @ 18 V +18V, -5V 1850 pF @ 400 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
SICW050N065H4-BP

SICW050N065H4-BP

SIC MOSFET,TO-247-4

Micro Commercial Co

5,141
SICW050N065H4-BP

Технический лист

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 650 V 60A (Tc) 20V 65mOhm @ 20A, 20V 4.5V @ 20mA 121 nC @ 20 V +20V, -5V 1850 pF @ 400 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IXTC200N10T

IXTC200N10T

MOSFET N-CH 100V 101A ISOPLUS220

IXYS

5,710

-

TrenchMV™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 101A (Tc) 10V 6.3mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±30V 9400 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS220™
IXTC230N085T

IXTC230N085T

MOSFET N-CH 85V 120A ISOPLUS220

IXYS

3,128
IXTC230N085T

Технический лист

- ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 85 V 120A (Tc) - - - - - - - - - - - Through Hole ISOPLUS220™
IRF644S

IRF644S

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

4,512

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF644STRL

IRF644STRL

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix

3,175

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
STF34NM60N

STF34NM60N

MOSFET N-CH 600V 31.5A TO220FP

STMicroelectronics

8,341
STF34NM60N

Технический лист

MDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 31.5A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2722 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STW13N95K3

STW13N95K3

MOSFET N-CH 950V 10A TO247-3

STMicroelectronics

6,182
STW13N95K3

Технический лист

SuperMESH3™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 950 V 10A (Tc) 10V 850mOhm @ 5A, 10V 5V @ 100µA 51 nC @ 10 V ±30V 1620 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
STW40N60M2-4

STW40N60M2-4

MOSFET N-CH 600V 34A TO247-3

STMicroelectronics

3,885
STW40N60M2-4

Технический лист

MDmesh™ II Plus TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SIHG20N50C-E3

SIHG20N50C-E3

MOSFET N-CH 500V 20A TO247AC

Vishay Siliconix

6,880
SIHG20N50C-E3

Технический лист

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SSFH6538

SSFH6538

MOSFET, N-CH, SINGLE, 38A, 650V,

Good-Ark Semiconductor

4,746
SSFH6538

Технический лист

- TO-220-3 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 19A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 3200 pF @ 50 V - 322W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
AOK42S60L

AOK42S60L

MOSFET N-CH 600V 39A TO247

Alpha & Omega Semiconductor Inc.

9,090
AOK42S60L

Технический лист

aMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 99mOhm @ 21A, 10V 3.8V @ 250µA 40 nC @ 10 V ±30V 2154 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
AUIRF3205Z

AUIRF3205Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

6
AUIRF3205Z

Технический лист

HEXFET® TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB

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