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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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STF25NM60NMOSFET N-CH 600V 21A TO220FP |
2,890 |
|
Технический лист |
MDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STF25NM50NMOSFET N-CH 500V 22A TO220FP |
8,569 |
|
Технический лист |
MDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2565 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STP25NM50NMOSFET N-CH 500V 22A TO220AB |
8,174 |
|
- |
MDmesh™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2565 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
STW23NM60NMOSFET N-CH 600V 19A TO247-3 |
5,167 |
|
Технический лист |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±25V | 2050 pF @ 50 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STP24NM65NMOSFET N-CH 650V 19A TO220AB |
7,312 |
|
Технический лист |
MDmesh™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±25V | 2500 pF @ 50 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRF6613TR1PBFMOSFET N-CH 40V 23A DIRECTFET |
3,059 |
|
Технический лист |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IRFP140NMOSFET N-CH 100V 33A TO247AC |
7,361 |
|
Технический лист |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 52mOhm @ 16A, 10V | 4V @ 250µA | 94 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
RSJ10HN06TLMOSFET N-CH 60V 100A LPTS |
9,628 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Ta) | 4V, 10V | 4.2mOhm @ 50A, 10V | 2.5V @ 1mA | 202 nC @ 10 V | ±20V | 11000 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
|
SIHS36N50D-E3MOSFET N-CH 500V 36A SUPER-247 |
8,056 |
|
Технический лист |
- | TO-274AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 130mOhm @ 18A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±30V | 3233 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | SUPER-247™ (TO-274AA) |
|
IXTQ64N25PMOSFET N-CH 250V 64A TO3P |
9,399 |
|
Технический лист |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 105 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
|
IXTQ96N15PMOSFET N-CH 150V 96A TO3P |
4,825 |
|
Технический лист |
Polar | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
|
IXFP30N60XMOSFET N-CH 600V 30A TO220 |
9,929 |
|
Технический лист |
HiPerFET™, Ultra X | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 155mOhm @ 15A, 10V | 4.5V @ 4mA | 56 nC @ 10 V | ±30V | 2270 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IXTA2R4N120P-TRLMOSFET N-CH 1200V 2.4A TO263 |
9,169 |
|
- |
Polar | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 2.4A (Tc) | 10V | 7.5Ohm @ 1.2A, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±30V | 1207 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
STW18NK60ZMOSFET N-CH 600V 16A TO247-3 |
6,061 |
|
Технический лист |
SuperMESH™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 360mOhm @ 8A, 10V | 4.5V @ 100µA | 170 nC @ 10 V | ±30V | 3540 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
IRF200S234MOSFET N-CH 200V 90A D2PAK |
8,797 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 16.9mOhm @ 51A, 10V | 5V @ 250µA | 162 nC @ 10 V | ±20V | 6484 pF @ 50 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IRF1405SMOSFET N-CH 55V 131A D2PAK |
7,801 |
|
Технический лист |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
STFI34NM60NMOSFET N-CH 600V 29A I2PAKFP |
2,616 |
|
Технический лист |
MDmesh™ II | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
|
|
IRL1404SMOSFET N-CH 40V 160A D2PAK |
3,677 |
|
Технический лист |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF8301MTRPBFMOSFET N-CH 30V 34A DIRECTFET |
8,537 |
|
Технический лист |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta), 192A (Tc) | 4.5V, 10V | 1.5mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
|
AUIRFS4010TRLMOSFET N-CH 100V 180A D2PAK |
5,654 |
|
Технический лист |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | - | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
