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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRLI640G

IRLI640G

MOSFET N-CH 200V 9.9A TO220-3

Vishay Siliconix

8,762
IRLI640G

Технический лист

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.9A (Tc) 4V, 5V 180mOhm @ 5.9A, 5V 2V @ 250µA 66 nC @ 10 V ±10V 1800 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SICW280N120A-BP

SICW280N120A-BP

MOSFET N-CH 1200V 10A TO247AB

Micro Commercial Co

5,936
SICW280N120A-BP

Технический лист

- TO-247-3 Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 16V, 20V 330mOhm @ 5A, 20V 3V @ 1mA 26 nC @ 18 V +22V, -5V 357 pF @ 1000 V - 97W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
BMS3003

BMS3003

MOSFET P-CH 60V 78A TO220ML

onsemi

9,391
BMS3003

Технический лист

- TO-220-3 Full Pack Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 78A (Ta) 4V, 10V 6.5mOhm @ 39A, 10V 2.6V @ 1mA 285 nC @ 10 V ±20V 13200 pF @ 20 V - 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220ML
IXTA340N04T4

IXTA340N04T4

MOSFET N-CH 40V 340A TO263AA

IXYS

3,151
IXTA340N04T4

Технический лист

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AA
SI7788DP-T1-GE3

SI7788DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix

9,580
SI7788DP-T1-GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.1mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
NVMFS5A160PLZT1G

NVMFS5A160PLZT1G

MOSFET P-CH 60V 15A/100A 5DFN

onsemi

4,450
NVMFS5A160PLZT1G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 100A (Tc) 4.5V, 10V 7.7mOhm @ 50A, 10V 2.6V @ 1mA 160 nC @ 10 V ±20V 7700 pF @ 20 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
NVMFWS004N10MCT1G

NVMFWS004N10MCT1G

MOSFET N-CH 100V 5DFN

onsemi

7,508
NVMFWS004N10MCT1G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 138A (Tc) 10V 3.9mOhm @ 48A, 10V 4V @ 270µA 48 nC @ 10 V ±20V 3600 pF @ 50 V - 3.8W (Ta), 164W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
SUV85N10-10-E3

SUV85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix

6,192
SUV85N10-10-E3

Технический лист

TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
SQ4840EY-T1_BE3

SQ4840EY-T1_BE3

MOSFET N-CH 40V 20.7A 8SOIC

Vishay Siliconix

6,438

-

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 20.7A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 2440 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
IPP120N04S302AKSA1

IPP120N04S302AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies

3,612
IPP120N04S302AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
AOTL66918

AOTL66918

N

Alpha & Omega Semiconductor Inc.

4,749
AOTL66918

Технический лист

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta), 214A (Tc) 8V, 10V 4.3mOhm @ 20A, 10V 3.7V @ 250µA 105 nC @ 10 V ±20V 6500 pF @ 50 V - 10W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
IXTH96N25T

IXTH96N25T

MOSFET N-CH 250V 96A TO247

Littelfuse Inc.

2,910
IXTH96N25T

Технический лист

Trench TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IRF150P221XKMA1

IRF150P221XKMA1

MOSFET N-CH 150V 186A TO247-3

Infineon Technologies

6,303
IRF150P221XKMA1

Технический лист

StrongIRFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 186A (Tc) 10V 4.5mOhm @ 100A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 6000 pF @ 75 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
NTB75N06T4G

NTB75N06T4G

MOSFET N-CH 60V 75A D2PAK

onsemi

4,784
NTB75N06T4G

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Ta) 10V 9.5mOhm @ 37.5A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 4510 pF @ 25 V - 2.4W (Ta), 214W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFS3107-7TRL

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK-7

Infineon Technologies

3,014
AUIRFS3107-7TRL

Технический лист

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
AOB66918L

AOB66918L

N

Alpha & Omega Semiconductor Inc.

6,715
AOB66918L

Технический лист

AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta), 120A (Tc) 8V, 10V 5mOhm @ 20A, 10V 3.7V @ 250µA 105 nC @ 10 V ±20V 6500 pF @ 50 V - 10W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
TSM60NB190CF

TSM60NB190CF

600V, 18A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,537

-

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 3.7A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 1311 pF @ 100 V - 59.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220S
STP25NM60ND

STP25NM60ND

MOSFET N-CH 600V 21A TO220AB

STMicroelectronics

2,537
STP25NM60ND

Технический лист

FDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) - - Through Hole TO-220
IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1

MOSFET N-CH 150V 130A TO263-7

Infineon Technologies

7,077
IPB065N15N3GE8187ATMA1

Технический лист

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 8V, 10V 6.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7300 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IXFA30N60X

IXFA30N60X

MOSFET N-CH 600V 30A TO263

IXYS

9,773
IXFA30N60X

Технический лист

HiPerFET™, Ultra X TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)

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