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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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SCT4026DEC11750V, 26M, 3-PIN THD, TRENCH-STR |
4,887 |
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Технический лист |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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SCT2160KEHRC111200V, 22A, THD, SILICON-CARBIDE |
374 |
|
Технический лист |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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IXTR102N65X2MOSFET N-CH 650V 54A ISOPLUS247 |
300 |
|
Технический лист |
Ultra X2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 33mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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SCT4026DW7HRTL750V, 51A, 7-PIN SMD, TRENCH-STR |
995 |
|
Технический лист |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 150W | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7L |
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SCT4026DW7TL750V, 51A, 7-PIN SMD, TRENCH-STR |
988 |
|
Технический лист |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tj) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 150W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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IPZA65R018CFD7XKSA1HIGH POWER_NEW |
238 |
|
Технический лист |
CoolMOS™ CFD7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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NVHL027N65S3FMOSFET N-CH 650V 75A TO247-3 |
479 |
|
Технический лист |
SuperFET® III, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 227 nC @ 10 V | ±30V | 7780 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IXFR24N100Q3MOSFET N-CH 1000V 18A ISOPLUS247 |
337 |
|
Технический лист |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 490mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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C3M0075120D-A75M 1200V 175C SIC FET |
379 |
|
Технический лист |
C3M™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | 54 nC @ 15 V | +15V, -4V | 1390 pF @ 1000 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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IXFL100N50PMOSFET N-CH 500V 70A ISOPLUS264 |
225 |
|
Технический лист |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 70A (Tc) | 10V | 52mOhm @ 50A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
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SCTWA50N120SICFET N-CH 1200V 65A HIP247 |
378 |
|
Технический лист |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122 nC @ 20 V | +25V, -10V | 1900 pF @ 400 V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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STY100NM60NMOSFET N CH 600V 98A MAX247 |
600 |
|
Технический лист |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 98A (Tc) | 10V | 29mOhm @ 49A, 10V | 4V @ 250µA | 330 nC @ 10 V | 25V | 9600 pF @ 50 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
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IXFX44N80PMOSFET N-CH 800V 44A PLUS247-3 |
300 |
|
Технический лист |
HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK32N100PMOSFET N-CH 1000V 32A TO264AA |
300 |
|
Технический лист |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFB110N60P3MOSFET N-CH 600V 110A PLUS264 |
118 |
|
Технический лист |
HiPerFET™, Polar3™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 110A (Tc) | 10V | 56mOhm @ 55A, 10V | 5V @ 8mA | 245 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
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S2M0040120DMOSFET SILICON CARBIDE SIC 1200V |
221 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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IXFR80N50Q3MOSFET N-CH 500V 50A ISOPLUS247 |
192 |
|
Технический лист |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 72mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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S2M0040120KMOSFET SILICON CARBIDE SIC 1200V |
103 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4 |
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NTH4L027N65S3FMOSFET N-CH 650V 75A TO247-4 |
449 |
|
Технический лист |
FRFET®, SuperFET® III | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 259 nC @ 10 V | ±30V | 7690 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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NTH027N65S3F-F155MOSFET N-CH 650V 75A TO247-3 |
472 |
|
Технический лист |
FRFET®, SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 7.5mA | 259 nC @ 10 V | ±30V | 7690 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
