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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
DMN2400UFB4-7B

DMN2400UFB4-7B

MOSFET N-CH X2-DFN1006-3

Diodes Incorporated

5,711
DMN2400UFB4-7B

Технический лист

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 750mA (Ta) 1.8V, 4.5V 550mOhm @ 600mA, 4.5V 900mV @ 250µA 0.5 nC @ 4.5 V ±12V 36 pF @ 16 V - 470mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN1006-3
DMN2400UFB4-7R

DMN2400UFB4-7R

MOSFET N-CH X2-DFN1006-3

Diodes Incorporated

6,123
DMN2400UFB4-7R

Технический лист

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 750mA (Ta) 1.8V, 4.5V 550mOhm @ 600mA, 4.5V 900mV @ 250µA 0.5 nC @ 4.5 V ±12V 36 pF @ 16 V - 470mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN1006-3
DMN2500UFB4-7B

DMN2500UFB4-7B

MOSFET N-CH X2-DFN1006-3

Diodes Incorporated

3,483
DMN2500UFB4-7B

Технический лист

- 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 810mA (Ta) 1.8V, 4.5V 400mOhm @ 600mA, 4.5V 1V @ 250µA 0.737 nC @ 4.5 V ±6V 60.67 pF @ 16 V - 460mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN1006-3
DMN62D0LFD-13

DMN62D0LFD-13

MOSFET N-CH X1-DFN1212-3

Diodes Incorporated

5,047

-

- 3-UDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 310mA (Ta) 1.8V, 4V 2Ohm @ 100mA, 4V 1V @ 250µA 0.5 nC @ 4.5 V ±20V 31 pF @ 25 V - 480mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X1-DFN1212-3
DMS3014SFG-13

DMS3014SFG-13

MOSFET N-CH POWERDI3333-8

Diodes Incorporated

4,785
DMS3014SFG-13

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 13mOhm @ 10.4A, 10V 2.2V @ 250µA 45.7 nC @ 10 V ±12V 4310 pF @ 15 V Schottky Diode (Body) 1W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount POWERDI3333-8
NVD5807NT4G-VF01

NVD5807NT4G-VF01

MOSFET N-CH 40V 23A DPAK

onsemi

6,786
NVD5807NT4G-VF01

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Tc) 4.5V, 10V 31mOhm @ 5A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 603 pF @ 25 V - 33W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
NVD6416ANLT4G

NVD6416ANLT4G

MOSFET N-CH 100V 19A DPAK

onsemi

9,575
NVD6416ANLT4G

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
NVD6495NLT4G

NVD6495NLT4G

MOSFET N-CH 100V 25A DPAK

onsemi

9,516
NVD6495NLT4G

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 4.5V, 10V 50mOhm @ 10A, 10V 2V @ 250µA 35 nC @ 10 V ±20V 1024 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
NTNS5K0P021ZTCG

NTNS5K0P021ZTCG

MOSFET P-CH 20V 127MA 3XDFN

onsemi

8,856
NTNS5K0P021ZTCG

Технический лист

- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 127mA (Ta) 1.5V, 4.5V 5Ohm @ 100mA, 4.5V 1V @ 250µA - ±8V 12.8 pF @ 15 V - 125mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-XDFN (0.42x0.62)
TSM2311CX-01 RFG

TSM2311CX-01 RFG

MOSFET P-CH 20V 4A SOT23

Taiwan Semiconductor Corporation

5,732

-

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±8V 640 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
TSM10N60CZ C0G

TSM10N60CZ C0G

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation

8,092
TSM10N60CZ C0G

Технический лист

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM22P10CI C0G

TSM22P10CI C0G

MOSFET P-CH 100V 22A ITO220

Taiwan Semiconductor Corporation

5,265
TSM22P10CI C0G

Технический лист

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 48W (Tc) 150°C (TJ) - - Through Hole ITO-220
TSM22P10CZ C0G

TSM22P10CZ C0G

MOSFET P-CH 100V 22A TO220

Taiwan Semiconductor Corporation

8,050
TSM22P10CZ C0G

Технический лист

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220
TSM230N06CI C0G

TSM230N06CI C0G

MOSFET N-CH 60V 50A ITO220

Taiwan Semiconductor Corporation

6,455
TSM230N06CI C0G

Технический лист

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 42W (Tc) 150°C (TJ) - - Through Hole ITO-220
TSM480P06CI C0G

TSM480P06CI C0G

MOSFET P-CH 60V 20A ITO220

Taiwan Semiconductor Corporation

6,126
TSM480P06CI C0G

Технический лист

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 27W (Tc) -50°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM480P06CZ C0G

TSM480P06CZ C0G

MOSFET P-CH 60V 20A TO220

Taiwan Semiconductor Corporation

9,265
TSM480P06CZ C0G

Технический лист

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) - - Through Hole TO-220
TSM680P06CI C0G

TSM680P06CI C0G

MOSFET P-CH 60V 18A ITO220

Taiwan Semiconductor Corporation

9,949
TSM680P06CI C0G

Технический лист

- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 17W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
TSM680P06CZ C0G

TSM680P06CZ C0G

MOSFET P-CH 60V 18A TO220

Taiwan Semiconductor Corporation

3,949
TSM680P06CZ C0G

Технический лист

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
2N7000-AP

2N7000-AP

MOSFET N-CH 60V 200MA TO92

Micro Commercial Co

3,899
2N7000-AP

Технический лист

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 220mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 60 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C - - Through Hole TO-92
MCMP06-TP

MCMP06-TP

MOSFET P-CH 2A DFN2020-6U

Micro Commercial Co

5,647

-

- 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel - - 2A (Ta) - 110mOhm @ 2.8A, 4.5V 1V @ 250µA - - - Schottky Diode (Isolated) - 150°C (TJ) - - Surface Mount DFN2020-6U

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