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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
NTD4909NAT4G

NTD4909NAT4G

MOSFET N-CH 30V 8.8A/41A DPAK

onsemi

5,994

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) - 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V - 1314 pF @ 15 V - - - - - Surface Mount DPAK
NTD4906NT4G

NTD4906NT4G

MOSFET N-CH 30V 10.3A/54A DPAK

onsemi

6,617
NTD4906NT4G

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V ±20V 1932 pF @ 15 V - 1.38W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTD4906NAT4G

NTD4906NAT4G

MOSFET N-CH 30V 10.3A/54A DPAK

onsemi

5,100

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) - 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V - 1932 pF @ 15 V - - - - - Surface Mount DPAK
NTMFS4935NBT3G

NTMFS4935NBT3G

MOSFET N-CH 30V 13A/93A 5DFN

onsemi

3,653
NTMFS4935NBT3G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 93A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2V @ 250µA 49.4 nC @ 10 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NDF06N60ZG

NDF06N60ZG

MOSFET N-CH 600V 7.1A TO220FP

onsemi

8,963
NDF06N60ZG

Технический лист

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.1A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 47 nC @ 10 V ±30V 1107 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STB18NM60N

STB18NM60N

MOSFET N-CH 600V 13A D2PAK

STMicroelectronics

7,859
STB18NM60N

Технический лист

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF7739L2TR1PBF

IRF7739L2TR1PBF

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies

2,405
IRF7739L2TR1PBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 375A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7749L2TR1PBF

IRF7749L2TR1PBF

MOSFET N-CH 60V 33A DIRECTFET

Infineon Technologies

2,447
IRF7749L2TR1PBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 375A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7759L2TR1PBF

IRF7759L2TR1PBF

MOSFET N-CH 75V 26A DIRECTFET

Infineon Technologies

3,022
IRF7759L2TR1PBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7769L2TR1PBF

IRF7769L2TR1PBF

MOSFET N-CH 100V 375A DIRECTFET

Infineon Technologies

5,768
IRF7769L2TR1PBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7799L2TR1PBF

IRF7799L2TR1PBF

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

9,776
IRF7799L2TR1PBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IXTV02N250S

IXTV02N250S

MOSFET N-CH 2500V 200MA PLUS220

IXYS

5,575
IXTV02N250S

Технический лист

- PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PLUS-220SMD
IRFH5306TRPBF

IRFH5306TRPBF

MOSFET N-CH 30V 15A/44A PQFN

Infineon Technologies

4,547
IRFH5306TRPBF

Технический лист

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 44A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1125 pF @ 15 V - 3.6W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6) Single Die
IRF7759L2TRPBF

IRF7759L2TRPBF

MOSFET N-CH 75V 26A DIRECTFET

Infineon Technologies

4,010
IRF7759L2TRPBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7799L2TRPBF

IRF7799L2TRPBF

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

4,411
IRF7799L2TRPBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 35A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IRF7815PBF

IRF7815PBF

MOSFET N-CH 150V 5.1A 8SO

Infineon Technologies

8,025
IRF7815PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued N-Channel MOSFET (Metal Oxide) 150 V 5.1A (Ta) 10V 43mOhm @ 3.1A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1647 pF @ 75 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF9310PBF

IRF9310PBF

MOSFET P-CH 30V 20A 8SO

Infineon Technologies

8,894
IRF9310PBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued P-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.4V @ 100µA 165 nC @ 10 V ±20V 5250 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
STU75N3LLH6-S

STU75N3LLH6-S

MOSFET N-CH 30V 75A IPAK

STMicroelectronics

2,393
STU75N3LLH6-S

Технический лист

DeepGATE™, STripFET™ VI TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 5.9mOhm @ 37.5A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1690 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-251 (IPAK)
PH1930AL,115

PH1930AL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

7,283

-

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) - 2mOhm @ 15A, 10V 2.15V @ 1mA 64 nC @ 10 V - 3980 pF @ 12 V - - - - - Surface Mount LFPAK56, Power-SO8
PH2530AL,115

PH2530AL,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

3,238

-

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) - 2.4mOhm @ 15A, 10V 2.15V @ 1mA 57 nC @ 10 V - 3468 pF @ 12 V - - - - - Surface Mount LFPAK56, Power-SO8

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