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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IPP45N06S3L-13

IPP45N06S3L-13

MOSFET N-CH 55V 45A TO220-3

Infineon Technologies

3,866
IPP45N06S3L-13

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 45A (Tc) 5V, 10V 13.4mOhm @ 26A, 10V 2.2V @ 30µA 75 nC @ 10 V ±16V 3600 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP50CN10NGXKSA1

IPP50CN10NGXKSA1

MOSFET N-CH 100V 20A TO220-3

Infineon Technologies

7,016
IPP50CN10NGXKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP77N06S3-09

IPP77N06S3-09

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies

5,484
IPP77N06S3-09

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 9.1mOhm @ 39A, 10V 4V @ 55µA 103 nC @ 10 V ±20V 5335 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80CN10NGHKSA1

IPP80CN10NGHKSA1

MOSFET N-CH 100V 13A TO220-3

Infineon Technologies

4,373
IPP80CN10NGHKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 80mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP80N06S3-05

IPP80N06S3-05

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

3,413
IPP80N06S3-05

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.4mOhm @ 63A, 10V 4V @ 110µA 240 nC @ 10 V ±20V 10760 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S3-07

IPP80N06S3-07

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

9,947
IPP80N06S3-07

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.8mOhm @ 51A, 10V 4V @ 80µA 170 nC @ 10 V ±20V 7768 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S3L-05

IPP80N06S3L-05

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

5,497
IPP80N06S3L-05

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 4.8mOhm @ 69A, 10V 2.2V @ 115µA 273 nC @ 10 V ±16V 13060 pF @ 25 V - 165W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S3L-06

IPP80N06S3L-06

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

3,644
IPP80N06S3L-06

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 5.9mOhm @ 56A, 10V 2.2V @ 80µA 196 nC @ 10 V ±16V 9417 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S3L-08

IPP80N06S3L-08

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

7,730
IPP80N06S3L-08

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 5V, 10V 7.9mOhm @ 43A, 10V 2.2V @ 55µA 134 nC @ 10 V ±16V 6475 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPS04N03LA G

IPS04N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies

9,720
IPS04N03LA G

Технический лист

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5199 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IPS06N03LA G

IPS06N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies

7,409
IPS06N03LA G

Технический лист

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2653 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IPS09N03LA G

IPS09N03LA G

MOSFET N-CH 25V 50A TO251-3

Infineon Technologies

5,884
IPS09N03LA G

Технический лист

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 8.8mOhm @ 30A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1642 pF @ 15 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IPS13N03LA G

IPS13N03LA G

MOSFET N-CH 25V 30A TO251-3

Infineon Technologies

5,197
IPS13N03LA G

Технический лист

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 12.8mOhm @ 30A, 10V 2V @ 20µA 8.3 nC @ 5 V ±20V 1043 pF @ 15 V - 46W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IPS20N03L G

IPS20N03L G

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies

6,331
IPS20N03L G

Технический лист

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - - - - - - - - - - - Through Hole PG-TO251-3-11
IPU06N03LB G

IPU06N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

6,064
IPU06N03LB G

Технический лист

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.3mOhm @ 50A, 10V 2V @ 40µA 22 nC @ 5 V ±20V 2800 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3
IPU09N03LB G

IPU09N03LB G

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

9,329
IPU09N03LB G

Технический лист

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 50A, 10V 2V @ 20µA 13 nC @ 5 V ±20V 1600 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-21
IPW60R299CPFKSA1

IPW60R299CPFKSA1

MOSFET N-CH 600V 11A TO247-3

Infineon Technologies

2,453
IPW60R299CPFKSA1

Технический лист

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
SIPC69N50C3X1SA2

SIPC69N50C3X1SA2

MOSFET COOL MOS SAWED WAFER

Infineon Technologies

6,278
SIPC69N50C3X1SA2

Технический лист

* - Bulk Active - - - - - - - - - - - - - - - - -
SN7002N E6327

SN7002N E6327

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies

6,030
SN7002N E6327

Технический лист

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23
SN7002N E6433

SN7002N E6433

MOSFET N-CH 60V 200MA SOT23-3

Infineon Technologies

9,319
SN7002N E6433

Технический лист

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23

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