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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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IPD05N03LB GMOSFET N-CH 30V 90A TO252-3 |
4,336 |
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Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4.8mOhm @ 60A, 10V | 2V @ 40µA | 25 nC @ 5 V | ±20V | 3200 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD09N03LB GMOSFET N-CH 30V 50A TO252-3 |
3,937 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 9.1mOhm @ 50A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1600 pF @ 15 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD10N03LAMOSFET N-CH 25V 30A TO252-3 |
4,679 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD10N03LA GMOSFET N-CH 25V 30A TO252-3 |
9,585 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD20N03LMOSFET N-CH 30V 30A TO252-3 |
7,887 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2V @ 25µA | 11 nC @ 5 V | ±20V | 700 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPD20N03L GMOSFET N-CH 30V 30A TO252-3 |
8,681 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2V @ 25µA | 19 nC @ 5 V | ±20V | 695 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD230N06NGBTMA1MOSFET N-CH 60V 30A TO252-3 |
9,743 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 23mOhm @ 30A, 10V | 4V @ 50µA | 31 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD800N06NGBTMA1MOSFET N-CH 60V 16A TO252-3 |
4,675 |
|
Технический лист |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 10V | 80mOhm @ 16A, 10V | 4V @ 16µA | 10 nC @ 10 V | ±20V | 370 pF @ 30 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPI06N03LAMOSFET N-CH 25V 50A TO262-3 |
8,144 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI09N03LAMOSFET N-CH 25V 50A TO262-3 |
8,696 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI25N06S3-25MOSFET N-CH 55V 25A TO262-3 |
9,049 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 10V | 25.1mOhm @ 15A, 10V | 4V @ 20µA | 41 nC @ 10 V | ±20V | 1862 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI25N06S3L-22MOSFET N-CH 55V 25A TO262-3 |
9,158 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 21.6mOhm @ 17A, 10V | 2.2V @ 20µA | 47 nC @ 10 V | ±16V | 2260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI60R199CPXKSA1MOSFET N-CH 600V 16A TO262-3 |
8,641 |
|
Технический лист |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3-05MOSFET N-CH 55V 80A TO262-3 |
5,735 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | 4V @ 110µA | 240 nC @ 10 V | ±20V | 10760 pF @ 25 V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S3-07MOSFET N-CH 55V 80A TO262-3 |
8,750 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170 nC @ 10 V | ±20V | 7768 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI80N06S3L06XKMOSFET N-CH 55V 80A TO262-3 |
8,545 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | 2.2V @ 80µA | 196 nC @ 10 V | ±16V | 9417 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI80N06S3L-08MOSFET N-CH 55V 80A TO262-3 |
6,476 |
|
Технический лист |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | 2.2V @ 55µA | 134 nC @ 10 V | ±16V | 6475 pF @ 25 V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP03N03LB GMOSFET N-CH 30V 80A TO220-3 |
4,746 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 55A, 10V | 2V @ 100µA | 59 nC @ 5 V | ±20V | 7624 pF @ 15 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP048N06L GMOSFET N-CH 60V 100A TO220-3 |
2,304 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 100A, 10V | 2V @ 270µA | 225 nC @ 10 V | ±20V | 7600 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP04N03LB GMOSFET N-CH 30V 80A TO220-3 |
3,283 |
|
Технический лист |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.8mOhm @ 55A, 10V | 2V @ 70µA | 40 nC @ 5 V | ±20V | 5203 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
