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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
TSM60NB041PW

TSM60NB041PW

600V, 78A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

2,916

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 41mOhm @ 21.7A, 10V 4V @ 250µA 139 nC @ 10 V ±30V 6120 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
G3R30MT12J

G3R30MT12J

SIC MOSFET N-CH 96A TO263-7

GeneSiC Semiconductor

8,563
G3R30MT12J

Технический лист

G3R™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 96A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 459W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
IXFX180N10

IXFX180N10

MOSFET N-CH 100V 180A PLUS247

IXYS

8,069
IXFX180N10

Технический лист

HiPerFET™ TO-247-3 Variant Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 390 nC @ 10 V ±20V 10900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
2N6660

2N6660

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

4,656
2N6660

Технический лист

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
2N6660-E3

2N6660-E3

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

5,074
2N6660-E3

Технический лист

- TO-205AD, TO-39-3 Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
APT40SM120S

APT40SM120S

SICFET N-CH 1200V 41A D3PAK

Microsemi Corporation

9,400

-

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 20V 100mOhm @ 20A, 20V 3V @ 1mA (Typ) 130 nC @ 20 V +25V, -10V 2560 pF @ 1000 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT94N65B2C6

APT94N65B2C6

MOSFET N-CH 650V 95A T-MAX

Microchip Technology

5,780

-

- TO-247-3 Variant Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 95A (Tc) 10V 35mOhm @ 35.2A, 10V 3.5V @ 3.5mA 320 nC @ 10 V ±20V 8140 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT41M80B2

APT41M80B2

MOSFET N-CH 800V 43A T-MAX

Microchip Technology

6,699
APT41M80B2

Технический лист

POWER MOS 8™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 43A (Tc) 10V 210mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
IXFK44N55Q

IXFK44N55Q

MOSFET N-CH 550V 44A TO264AA

IXYS

6,155

-

HiPerFET™, Q Class TO-264-3, TO-264AA Box Obsolete N-Channel MOSFET (Metal Oxide) 550 V 44A (Tc) 10V 120mOhm @ 22A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 6400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT6021BLLG

APT6021BLLG

MOSFET N-CH 600V 29A TO247

Microchip Technology

8,681
APT6021BLLG

Технический лист

POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) - 210mOhm @ 14.5A, 10V 5V @ 1mA 80 nC @ 10 V - 3470 pF @ 25 V - - - - - Through Hole TO-247 [B]
IXFN280N07

IXFN280N07

MOSFET N-CH 70V 280A SOT-227B

IXYS

6,941
IXFN280N07

Технический лист

HiPerFET™ SOT-227-4, miniBLOC Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 280A (Tc) 10V 5mOhm @ 120A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 9400 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
DMWSH120H23SM3

DMWSH120H23SM3

LINEAR IC

Diodes Incorporated

6,663

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 100A (Tc) 15V, 18V 23mOhm @ 50A, 18V 3.6V @ 17.7mA 217 nC @ 18 V +22V, -10V 3962 pF @ 1000 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H23SM4

DMWSH120H23SM4

LINEAR IC

Diodes Incorporated

2,493

-

- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 100A (Tc) 15V, 18V 23mOhm @ 50A, 18V 3.6V @ 17.7mA 217 nC @ 18 V +22V, -10V 3962 pF @ 1000 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
UJ4SC075010L8SSR

UJ4SC075010L8SSR

750V/10MO,SICFET,G4,TOLL

Qorvo

6,475
UJ4SC075010L8SSR

Технический лист

- 8-PowerSFN Bulk Active N-Channel, Depletion Mode SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 556W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
IXFL60N60

IXFL60N60

MOSFET N-CH 600V 60A ISOPLUS264

IXYS

6,899

-

HiPerFET™ TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 80mOhm @ 30A, 10V 4V @ 8mA 380 nC @ 10 V ±20V 10000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS264™
IRFPS40N50L

IRFPS40N50L

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix

5,067

-

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
IXFK30N110P

IXFK30N110P

MOSFET N-CH 1100V 30A TO264AA

IXYS

2,642

-

HiPerFET™, Polar TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1100 V 30A (Tc) 10V 360mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
APT10090SLLG

APT10090SLLG

MOSFET N-CH 1000V 12A D3PAK

Microchip Technology

4,007
APT10090SLLG

Технический лист

POWER MOS 7® TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) - 900mOhm @ 6A, 10V 5V @ 1mA 71 nC @ 10 V - 1969 pF @ 25 V - - - - - Surface Mount D3PAK
IXFX140N60X3

IXFX140N60X3

DISCRETE MOSFET 140A 600V X3 PLU

Littelfuse Inc.

2,111

-

- - Tube Active - - - - - - - - - - - - - - - - -
APT8024LVRG

APT8024LVRG

MOSFET N-CH 800V 33A TO264

Microsemi Corporation

4,535

-

POWER MOS V® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 240mOhm @ 16.5A, 10V 4V @ 2.5mA 425 nC @ 10 V - 7740 pF @ 25 V - - - - - Through Hole TO-264 [L]

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