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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IXTA3N120-TRR

IXTA3N120-TRR

MOSFET N-CH 1200V 3A TO263

Littelfuse Inc.

4,760

-

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
GS61008T-TR

GS61008T-TR

GS61008T-TR

Infineon Technologies Canada Inc.

8,720

-

- 4-SMD, No Lead Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100 V 90A (Tc) 6V 9.5mOhm @ 27A, 6V 1.3V @ 7mA 12 nC @ 6 V +7V, -10V 590 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
STWA20N95DK5

STWA20N95DK5

MOSFET N-CH 950V 18A TO247

STMicroelectronics

3,324
STWA20N95DK5

Технический лист

MDmesh™ DK5 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
IXFH110N15T2

IXFH110N15T2

MOSFET N-CH 150V 110A TO247AD

Littelfuse Inc.

4,459
IXFH110N15T2

Технический лист

HiPerFET™, TrenchT2™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 500mA, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD (IXFH)
IXTA90N20X3

IXTA90N20X3

MOSFET N-CH 200V 90A TO263

Littelfuse Inc.

2,324
IXTA90N20X3

Технический лист

Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12mOhm @ 45A, 10V 4.5V @ 250µA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
STWA46N65DM6AG

STWA46N65DM6AG

DISCRETE

STMicroelectronics

4,244

-

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 63mOhm @ 25A, 10V 4.75V @ 250µA 80 nC @ 10 V ±25V 3344 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247 Long Leads
IXFH30N60X

IXFH30N60X

MOSFET N-CH 600V 30A TO247

IXYS

4,249
IXFH30N60X

Технический лист

HiPerFET™, Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
FDBL9401-F085

FDBL9401-F085

MOSFET N-CH 40V 300A 8HPSOF

onsemi

6,512
FDBL9401-F085

Технический лист

PowerTrench® 8-PowerSFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 0.65mOhm @ 80A, 10V 4V @ 250µA 296 nC @ 10 V ±20V 15900 pF @ 25 V - 429W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-HPSOF
IXFQ24N60X

IXFQ24N60X

MOSFET N-CH 600V 24A TO3P

IXYS

9,816
IXFQ24N60X

Технический лист

HiPerFET™, Ultra X TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Vishay Siliconix

3,542

-

- TO-274AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole SUPER-247™ (TO-274AA)
FDB8860

FDB8860

MOSFET N-CH 30V 80A TO263AB

onsemi

1
FDB8860

Технический лист

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.3mOhm @ 80A, 10V 3V @ 250µA 214 nC @ 10 V ±20V 12585 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
2SK3811-ZP-E1-AY

2SK3811-ZP-E1-AY

MOSFET N-CH 40V 110A TO263

Renesas Electronics Corporation

2,265
2SK3811-ZP-E1-AY

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.8mOhm @ 55A, 10V - 260 nC @ 10 V ±20V 17700 pF @ 10 V - 1.5W (Ta), 213W (Tc) 150°C (TJ) - - Surface Mount TO-263
UJ4C075060L8S

UJ4C075060L8S

750V/60MO,SICFET,G4,TOLL

Qorvo

6,698
UJ4C075060L8S

Технический лист

- 8-PowerSFN Bulk Active P-Channel SiCFET (Silicon Carbide) 750 V 27.8A (Tc) 12V 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1420 pF @ 400 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
IXTR62N15P

IXTR62N15P

MOSFET N-CH 150V 36A ISOPLUS247

IXYS

8,695

-

Polar TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 45mOhm @ 31A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS247™
STB30NM60N

STB30NM60N

MOSFET N-CH 600V 25A D2PAK

STMicroelectronics

5,381
STB30NM60N

Технический лист

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 130mOhm @ 12.5A, 10V 4V @ 250µA 91 nC @ 10 V ±30V 2700 pF @ 50 V - 190W (Tc) 150°C (TJ) - - Surface Mount D2PAK
STF30N65M5

STF30N65M5

MOSFET N-CH 650V 22A TO220FP

STMicroelectronics

6,820
STF30N65M5

Технический лист

MDmesh™ V TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220FP
IRLH5036TR2PBF

IRLH5036TR2PBF

MOSFET N-CH 60V 100A 5X6 PQFN

Infineon Technologies

7,960
IRLH5036TR2PBF

Технический лист

- 8-PowerVDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 100A (Tc) - 4.4mOhm @ 50A, 10V 2.5V @ 150µA 90 nC @ 10 V - 5360 pF @ 25 V - - - - - Surface Mount 8-PQFN (5x6)
IPF010N04NF2SATMA1

IPF010N04NF2SATMA1

TRENCH <= 40V

Infineon Technologies

9,340
IPF010N04NF2SATMA1

Технический лист

StrongIRFET™2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 289A (Tc) 6V, 10V 1mOhm @ 100A, 10V 3.4V @ 189µA 239 nC @ 10 V ±20V 11300 pF @ 20 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-U02
IRF7494TR

IRF7494TR

MOSFET N-CH 150V 5.2A 8-SOIC

Infineon Technologies

4,818
IRF7494TR

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5.2A (Ta) - 44mOhm @ 3.1A, 10V 4V @ 250µA 54 nC @ 10 V - 1750 pF @ 25 V - - - - - Surface Mount 8-SO
NTMFS5C404NLTT3G

NTMFS5C404NLTT3G

MOSFET N-CH 40V 5DFN

onsemi

2,072
NTMFS5C404NLTT3G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 370A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)

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