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FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SMA5117MOSFET 6N-CH 250V 7A 12SIP |
10 |
|
Технический лист |
- | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 250V | 7A | 250mOhm @ 3.5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 4W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
ALD114804ASCLMOSFET 4N-CH 10.6V 16SOIC |
7,166 |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD114904APALMOSFET 2N-CH 10.6V 8PDIP |
5,962 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD114804PCLMOSFET 4N-CH 10.6V 16PDIP |
6,312 |
|
Технический лист |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
|
ALD114813PCLMOSFET 4N-CH 10.6V 16PDIP |
3,675 |
|
Технический лист |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
|
ALD310700PCLMOSFET 4P-CH 8V 16PDIP |
5,440 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
|
ALD310702PCLMOSFET 4P-CH 8V 16PDIP |
6,176 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
|
ALD210800PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
4,558 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
|
ALD212914PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
2,264 |
|
- |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | - | - | Through Hole | 8-PDIP |
|
ALD310700ASCLMOSFET 4P-CH 8V 16SOIC |
3,644 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
|
ALD310702ASCLMOSFET 4P-CH 8V 16SOIC |
9,432 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
|
ALD310704ASCLMOSFET 4P-CH 8V 16SOIC |
2,227 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
|
ALD310708ASCLMOSFET 4P-CH 8V 16SOIC |
4,838 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
|
ALD210808ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
7,513 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD212908ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
5,049 |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SLA5061MOSFET 3N/3P-CH 60V 10A/6A 12SIP |
8,705 |
|
Технический лист |
- | 12-SIP Exposed Tab | Bulk | Active | MOSFET (Metal Oxide) | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 10A, 6A | 140mOhm @ 5A, 4V | - | - | 460pF @ 10V, 1200pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
|
ALD114835PCLMOSFET 4N-CH 10.6V 16PDIP |
2,382 |
|
Технический лист |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
|
ALD110908APALMOSFET 2N-CH 10.6V 8PDIP |
7,794 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
SLA5075MOSFET 6N-CH 500V 5A 15ZIP |
5,827 |
|
Технический лист |
- | 15-SIP Exposed Tab, Formed Leads | Tube | Not For New Designs | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 500V | 5A | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | 770pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 15-ZIP |
|
|
ALD210808APCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
3,750 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
