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FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ALD114904PALMOSFET 2N-CH 10.6V 8PDIP |
2,925 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD210808SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
5,370 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
SP8J5TBMOSFET 2P-CH 30V 7A 8SOP |
8,074 |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 7A | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | 2600pF @ 10V | 2W | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
SI7946DP-T1-E3MOSFET 2N-CH 150V 2.1A PPAK SO8 |
6,259 |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.1A | 150mOhm @ 3.3A, 10V | 4V @ 250µA | 20nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
|
SI7946DP-T1-GE3MOSFET 2N-CH 150V 2.1A PPAK SO8 |
5,073 |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 150V | 2.1A | 150mOhm @ 3.3A, 10V | 4V @ 250µA | 20nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
|
ALD114813SCLMOSFET 4N-CH 10.6V 16SOIC |
4,588 |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD212900SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
5,721 |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
ALD114913PALMOSFET 2N-CH 10.6V 8PDIP |
4,842 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
SLA5060MOSFET 3N/3P-CH 60V 6A 12SIP |
5,047 |
|
Технический лист |
- | 12-SIP Exposed Tab | Bulk | Active | MOSFET (Metal Oxide) | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 6A | 220mOhm @ 3A, 4V | - | - | 320pF @ 10V, 790pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
|
ALD212902PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
8,712 |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
ALD212904PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
2,419 |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
ALD212908PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
7,960 |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
ALD210802SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
6,543 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
|
ALD210804SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
6,836 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
|
ALD210814SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
4,551 |
|
- |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | - | - | Surface Mount | 16-SOIC |
|
|
ALD110908PALMOSFET 2N-CH 10.6V 8PDIP |
8,249 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
ALD110914PALMOSFET 2N-CH 10.6V 8PDIP |
9,592 |
|
Технический лист |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
|
ALD110802SCLMOSFET 4N-CH 10.6V 16SOIC |
5,212 |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
|
ALD110804SCLMOSFET 4N-CH 10.6V 16SOIC |
3,286 |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD210808PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
6,795 |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
