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Мостовые выпрямители

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип диода Технология Напряжение - Пиковое обратное (макс.) Ток - Средний выпрямленный (Io) Напряжение - Прямой (Vf) (макс.) @ If Ток - Обратный утечка @ Vr Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
BU1210-M3/51

BU1210-M3/51

BRIDGE RECT 1PHASE 1KV 12A BU

Vishay General Semiconductor - Diodes Division

7,289
BU1210-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008-M3/45

BU1008-M3/45

BRIDGE RECT 1PHASE 800V 10A BU

Vishay General Semiconductor - Diodes Division

3,194
BU1008-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010A-M3/45

BU1010A-M3/45

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

8,107
BU1010A-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-M3/45

BU1010-M3/45

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

4,952
BU1010-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1206-M3/45

BU1206-M3/45

BRIDGE RECT 1PHASE 600V 12A BU

Vishay General Semiconductor - Diodes Division

6,439
BU1206-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1208-M3/45

BU1208-M3/45

BRIDGE RECT 1PHASE 800V 12A BU

Vishay General Semiconductor - Diodes Division

7,341
BU1208-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1210-M3/45

BU1210-M3/45

BRIDGE RECT 1PHASE 1KV 12A BU

Vishay General Semiconductor - Diodes Division

7,389
BU1210-M3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
GSIB15A20N-M3/45

GSIB15A20N-M3/45

BRIDGE RECT 1P 200V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

4,921
GSIB15A20N-M3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 200 V 15 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB15A40N-M3/45

GSIB15A40N-M3/45

BRIDGE RECT 1P 400V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

8,438
GSIB15A40N-M3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 400 V 15 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB15A60N-M3/45

GSIB15A60N-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

9,428
GSIB15A60N-M3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 600 V 15 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB15A80N-M3/45

GSIB15A80N-M3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division

3,828
GSIB15A80N-M3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 800 V 15 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GBJ20005-F

GBJ20005-F

BRIDGE RECT 1PHASE 50V 20A GBJ

Diodes Incorporated

4,855
GBJ20005-F

Технический лист

- 4-SIP, GBJ Tube Obsolete Single Phase Standard 50 V 20 A 1.05 V @ 10 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
MB251D-BP

MB251D-BP

BRIDGE RECT 1P 110V 25A MB-35D

Micro Commercial Co

2,793

-

- 4-Square, MB-35D Tray Obsolete Single Phase Standard 110 V 25 A 2.1 V @ 12.5 A 2 µA @ 110 V -55°C ~ 125°C (TJ) - - QC Terminal MB-35D
GBJ2510

GBJ2510

BRIDGE RECT 1PHASE 1KV 25A GBJ

Diodes Incorporated

5,402
GBJ2510

Технический лист

- 4-SIP, GBJ Tube Discontinued Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) - - Through Hole GBJ
GBU10005

GBU10005

BRIDGE RECT 1PHASE 50V 10A GBU

Diodes Incorporated

8,628
GBU10005

Технический лист

- 4-SIP, GBU Tube Active Single Phase Standard 50 V 10 A 1 V @ 5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GSIB2020-E3/45

GSIB2020-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

8,937
GSIB2020-E3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 200 V 3.5 A 1 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GSIB2040-E3/45

GSIB2040-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

8,800
GSIB2040-E3/45

Технический лист

- 4-SIP, GSIB-5S Tube Active Single Phase Standard 400 V 3.5 A 1 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GSIB-5S
GBJ15L08-BP

GBJ15L08-BP

BRIDGE RECT 1PHASE 800V 15A GBJ

Micro Commercial Co

7,190
GBJ15L08-BP

Технический лист

- 4-SIP, GBJ Tape & Reel (TR) Active Single Phase Standard 800 V 15 A 920 mV @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
NSR2030QMUTAG

NSR2030QMUTAG

BRIDGE RECT 1PHASE 30V 2A 4UDFN

onsemi

7,552
NSR2030QMUTAG

Технический лист

- 4-UDFN Exposed Pad Tape & Reel (TR) Active Single Phase Schottky 30 V 2 A 650 mV @ 2 A 20 µA @ 30 V 125°C (TJ) - - Surface Mount 4-UDFN (3.5x3.5)
L6210

L6210

BRIDGE RECT 1PHASE 50V 2A 16DIP

STMicroelectronics

6,190
L6210

Технический лист

- 16-DIP (0.300", 7.62mm) Tube Obsolete Single Phase Schottky 50 V 2 A 1.2 V @ 1 A 1 mA @ 40 V 70°C (TA) - - Through Hole 16-PowerDIP
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