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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип диода Технология Напряжение - Пиковое обратное (макс.) Ток - Средний выпрямленный (Io) Напряжение - Прямой (Vf) (макс.) @ If Ток - Обратный утечка @ Vr Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

5,339
BU1006A-E3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1PHASE 600V 3A BU

Vishay General Semiconductor - Diodes Division

4,373
BU1006A-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006-E3/51

BU1006-E3/51

BRIDGE RECT 1PHASE 600V 3.2A BU

Vishay General Semiconductor - Diodes Division

3,847
BU1006-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

4,118
BU1008A-E3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1PHASE 800V 3A BU

Vishay General Semiconductor - Diodes Division

7,047
BU1008A-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008-E3/45

BU1008-E3/45

BRIDGE RECT 1PHASE 800V 3.2A BU

Vishay General Semiconductor - Diodes Division

4,881
BU1008-E3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1PHASE 1KV 3A BU

Vishay General Semiconductor - Diodes Division

9,265
BU1010A-E3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-E3/45

BU1010-E3/45

BRIDGE RECT 1PHASE 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division

5,684
BU1010-E3/45

Технический лист

- 4-SIP, BU Tube Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1PHASE 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division

6,626
BU1010-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1206-E3/51

BU1206-E3/51

BRIDGE RECT 1PHASE 600V 3.4A BU

Vishay General Semiconductor - Diodes Division

6,077
BU1206-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1208-E3/51

BU1208-E3/51

BRIDGE RECT 1PHASE 800V 3.4A BU

Vishay General Semiconductor - Diodes Division

8,506
BU1208-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1210-E3/51

BU1210-E3/51

BRIDGE RECT 1PHASE 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division

6,301
BU1210-E3/51

Технический лист

- 4-SIP, BU Bulk Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006A-M3/51

BU1006A-M3/51

BRIDGE RECT 1PHASE 600V 10A BU

Vishay General Semiconductor - Diodes Division

3,989
BU1006A-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1006-M3/51

BU1006-M3/51

BRIDGE RECT 1PHASE 600V 10A BU

Vishay General Semiconductor - Diodes Division

7,043
BU1006-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008A-M3/51

BU1008A-M3/51

BRIDGE RECT 1PHASE 800V 10A BU

Vishay General Semiconductor - Diodes Division

5,246
BU1008A-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1008-M3/51

BU1008-M3/51

BRIDGE RECT 1PHASE 800V 10A BU

Vishay General Semiconductor - Diodes Division

3,102
BU1008-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010A-M3/51

BU1010A-M3/51

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

5,773
BU1010A-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1010-M3/51

BU1010-M3/51

BRIDGE RECT 1PHASE 1KV 10A BU

Vishay General Semiconductor - Diodes Division

9,561
BU1010-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1206-M3/51

BU1206-M3/51

BRIDGE RECT 1PHASE 600V 12A BU

Vishay General Semiconductor - Diodes Division

4,487
BU1206-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
BU1208-M3/51

BU1208-M3/51

BRIDGE RECT 1PHASE 800V 12A BU

Vishay General Semiconductor - Diodes Division

7,750
BU1208-M3/51

Технический лист

- 4-SIP, BU Tray Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole isoCINK+™ BU
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