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Одиночные диоды

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Напряжение - Обратный постоянный ток (Vr) (макс.) Ток - Средний выпрямленный (Io) Напряжение - Прямой (Vf) (макс.) @ If Скорость Время обратного восстановления (trr) Ток - Обратный утечка @ Vr Емкость @ Vr, F Марка Квалификация Тип крепления Устройство поставщика Упаковка Рабочая температура - Переход
CR5-080 TR

CR5-080 TR

DIODE GEN PURP 800V 5A DO201AD

Central Semiconductor Corp

3,876
CR5-080 TR

Технический лист

CR5-010 DO-201AD, Axial Tape & Reel (TR) Obsolete Standard 800 V 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-120 TR

CR5-120 TR

DIODE GEN PURP 5A DO201AD

Central Semiconductor Corp

7,940
CR5-120 TR

Технический лист

CR5-010 DO-201AD, Axial Tape & Reel (TR) Obsolete Standard - 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-020 BK

CR5-020 BK

DIODE GEN PURP 200V 5A DO201AD

Central Semiconductor Corp

2,069
CR5-020 BK

Технический лист

CR5-010 DO-201AD, Axial Box Obsolete Standard 200 V 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-040 BK

CR5-040 BK

DIODE GEN PURP 400V 5A DO201AD

Central Semiconductor Corp

8,529
CR5-040 BK

Технический лист

CR5-010 DO-201AD, Axial Box Obsolete Standard 400 V 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-060 BK

CR5-060 BK

DIODE GEN PURP 600V 5A DO201AD

Central Semiconductor Corp

2,437
CR5-060 BK

Технический лист

CR5-010 DO-201AD, Axial Box Obsolete Standard 600 V 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-100 BK

CR5-100 BK

DIODE GEN PURP 5A DO201AD

Central Semiconductor Corp

8,599
CR5-100 BK

Технический лист

CR5-010 DO-201AD, Axial Box Obsolete Standard - 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CR5-120 BK

CR5-120 BK

DIODE GEN PURP 5A DO201AD

Central Semiconductor Corp

9,682
CR5-120 BK

Технический лист

CR5-010 DO-201AD, Axial Box Obsolete Standard - 5A 1.2 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1200 V 25pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
CN645 BK

CN645 BK

DIODE GEN PURP 225V 400MA DO41

Central Semiconductor Corp

4,617
CN645 BK

Технический лист

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 200 nA @ 225 V 11pF @ 12V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
ES15JLWHRVG

ES15JLWHRVG

DIODE GEN PURP 600V 1.5A SOD123W

Taiwan Semiconductor Corporation

8,037

-

- SOD-123W Tape & Reel (TR) Active Standard 600 V 1.5A 1.7 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 600 V 20pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SOD-123W -55°C ~ 150°C
ES15DLWHRVG

ES15DLWHRVG

DIODE GEN PURP 200V 1.5A SOD123W

Taiwan Semiconductor Corporation

8,335

-

- SOD-123W Tape & Reel (TR) Discontinued Standard 200 V 1.5A 950 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 200 V 24pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SOD-123W -55°C ~ 150°C
CDBJSC101200-G

CDBJSC101200-G

DIODE SIL CARB 1.2KV 10A TO220-2

Comchip Technology

7,566
CDBJSC101200-G

Технический лист

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 780pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CDBJSC101700-G

CDBJSC101700-G

DIODE SIL CARB 1.7KV 35A TO220-2

Comchip Technology

2,826
CDBJSC101700-G

Технический лист

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1700 V 35A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1700 V 1400pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CDBJSC51200-G

CDBJSC51200-G

DIODE SIL CARB 1.2KV 5A TO220-2

Comchip Technology

5,433
CDBJSC51200-G

Технический лист

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 475pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GPA801DT-TP

GPA801DT-TP

DIODE GEN PURP 50V 8A D2PAK

Micro Commercial Co

8,687
GPA801DT-TP

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz - - Surface Mount D2PAK -65°C ~ 150°C
GPA803DT-TP

GPA803DT-TP

DIODE GEN PURP 200V 8A D2PAK

Micro Commercial Co

9,136
GPA803DT-TP

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 50pF @ 4V, 1MHz - - Surface Mount D2PAK -65°C ~ 150°C
GPA805DT-TP

GPA805DT-TP

DIODE GEN PURP 600V 8A D2PAK

Micro Commercial Co

9,618
GPA805DT-TP

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz - - Surface Mount D2PAK -65°C ~ 150°C
GPA806DT-TP

GPA806DT-TP

DIODE GEN PURP 800V 8A D2PAK

Micro Commercial Co

2,685
GPA806DT-TP

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 800 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz - - Surface Mount D2PAK -65°C ~ 150°C
GPA807DT-TP

GPA807DT-TP

DIODE GEN PURP 1KV 8A D2PAK

Micro Commercial Co

6,571
GPA807DT-TP

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Standard 1000 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 50pF @ 4V, 1MHz - - Surface Mount D2PAK -65°C ~ 150°C
GPA801-BP

GPA801-BP

DIODE GEN PURP 50V 8A TO220AC

Micro Commercial Co

6,801
GPA801-BP

Технический лист

- TO-220-2 Bulk Obsolete Standard 50 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
GPA802-BP

GPA802-BP

DIODE GEN PURP 100V 8A TO220AC

Micro Commercial Co

4,290
GPA802-BP

Технический лист

- TO-220-2 Bulk Obsolete Standard 100 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C

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