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EASTECH Electronics

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EASTECH Electronics EASTECH Electronics

FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
BUK7Y65-100EX

BUK7Y65-100EX

MOSFET N-CH 100V 19A LFPAK56

Nexperia USA Inc.

4,309
BUK7Y65-100EX

Технический лист

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 65mOhm @ 5A, 10V 4V @ 1mA 17.8 nC @ 10 V ±20V 1023 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
TPH8R903NL,LQ

TPH8R903NL,LQ

MOSFET N CH 30V 20A 8SOP

Toshiba Semiconductor and Storage

3,150
TPH8R903NL,LQ

Технический лист

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 8.9mOhm @ 10A, 10V 2.3V @ 1mA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1.6W (Ta), 24W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
SIHFR9310TRR-GE3

SIHFR9310TRR-GE3

MOSFET P-CHANNEL 400V

Vishay Siliconix

1,266
SIHFR9310TRR-GE3

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
NVTFS6H880NLWFTAG

NVTFS6H880NLWFTAG

MOSFET N-CH 80V 6.6A/22A 8WDFN

onsemi

1,248
NVTFS6H880NLWFTAG

Технический лист

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 6.6A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 5A, 10V 2V @ 20µA 9 nC @ 10 V ±20V 431 pF @ 40 V - 3.1W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
SSM10N954L,EFF

SSM10N954L,EFF

COMMON-DRAIN NCH MOSFET, 12V, 13

Toshiba Semiconductor and Storage

9,865
SSM10N954L,EFF

Технический лист

- 10-SMD, No Lead Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 13.5A (Ta) 2.5V, 4.5V 2.75mOhm @ 6A, 4.5V 1.4V @ 1.11mA 25 nC @ 4 V ±8V - - 800mW (Ta) 150°C - - Surface Mount TCSPAC-153001
BUK9Y40-55B,115

BUK9Y40-55B,115

MOSFET N-CH 55V 26A LFPAK56

Nexperia USA Inc.

9,634
BUK9Y40-55B,115

Технический лист

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 5V 36mOhm @ 15A, 10V 2V @ 1mA 11 nC @ 5 V ±15V 1020 pF @ 25 V - 59W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
SI3459BDV-T1-E3

SI3459BDV-T1-E3

MOSFET P-CH 60V 2.9A 6TSOP

Vishay Siliconix

5,833
SI3459BDV-T1-E3

Технический лист

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 2.9A (Tc) 4.5V, 10V 216mOhm @ 2.2A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 350 pF @ 30 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
SQJA70EP-T1_GE3

SQJA70EP-T1_GE3

MOSFET N-CH 100V 14.7A PPAK SO-8

Vishay Siliconix

5,716
SQJA70EP-T1_GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 14.7A (Tc) 10V 95mOhm @ 4A, 10V 3.5V @ 250µA 7 nC @ 10 V ±20V 220 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
AOU4N60

AOU4N60

MOSFET N-CH 600V 4A TO251-3

Alpha & Omega Semiconductor Inc.

3,972
AOU4N60

Технический лист

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.3Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 640 pF @ 25 V - 104W (Tc) -50°C ~ 150°C (TJ) - - Through Hole TO-251-3
R6004KNX

R6004KNX

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor

262
R6004KNX

Технический лист

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 10.2 nC @ 10 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
TSM110NB04CR RLG

TSM110NB04CR RLG

MOSFET N-CH 40V 12A/54A 8PDFN

Taiwan Semiconductor Corporation

22,000
TSM110NB04CR RLG

Технический лист

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 54A (Tc) 10V 11mOhm @ 12A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 1443 pF @ 20 V - 3.1W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5.2x5.75)
DMP1011UCB9-7

DMP1011UCB9-7

MOSFET P-CH 8V 10A U-WLB1515-9

Diodes Incorporated

21,010
DMP1011UCB9-7

Технический лист

- 9-UFBGA, WLBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8 V 10A (Ta) 2.5V, 4.5V 10mOhm @ 2A, 4.5V 1.1V @ 250µA 10.5 nC @ 4.5 V -6V 1060 pF @ 4 V - 890mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1515-9
RQ3L050GNTB

RQ3L050GNTB

MOSFET N-CHANNEL 60V 12A 8HSMT

Rohm Semiconductor

10,966
RQ3L050GNTB

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 61mOhm @ 5A, 10V 2.5V @ 25µA 2.8 nC @ 4.5 V ±20V 300 pF @ 30 V - 14.8W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
TSM1NB60CW RPG

TSM1NB60CW RPG

MOSFET N-CHANNEL 600V 1A SOT223

Taiwan Semiconductor Corporation

9,546
TSM1NB60CW RPG

Технический лист

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 10Ohm @ 500mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
TSM220NB06CR RLG

TSM220NB06CR RLG

MOSFET N-CH 60V 8A/35A 8PDFN

Taiwan Semiconductor Corporation

8,866
TSM220NB06CR RLG

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 35A (Tc) 10V 22mOhm @ 8A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 1454 pF @ 30 V - 3.1W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5x6)
RTR030N05HZGTL

RTR030N05HZGTL

MOSFET N-CH 45V 3A TSMT3

Rohm Semiconductor

8,074
RTR030N05HZGTL

Технический лист

- SC-96 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 3A (Ta) 2.5V, 4.5V 67mOhm @ 3A, 4.5V 1.5V @ 1mA 6.2 nC @ 4.5 V ±12V 510 pF @ 10 V - 700mW (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT3
ZXMP10A17E6QTA

ZXMP10A17E6QTA

MOSFET P-CH 100V 1.3A SOT26

Diodes Incorporated

7,964

-

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 1.3A (Ta) 6V, 10V 350mOhm @ 1.4A, 10V 4V @ 250µA 10.7 nC @ 10 V ±20V 424 pF @ 50 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
RSQ030N08HZGTR

RSQ030N08HZGTR

MOSFET N-CH 80V 3A TSMT6

Rohm Semiconductor

7,901
RSQ030N08HZGTR

Технический лист

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Ta) 4V, 10V 131mOhm @ 3A, 10V 2.5V @ 1mA 6.5 nC @ 5 V ±20V 550 pF @ 10 V - 950mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT6 (SC-95)
DMP2007UFG-13

DMP2007UFG-13

MOSFET P-CH 20V 18A PWRDI3333

Diodes Incorporated

6,994
DMP2007UFG-13

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 40A (Tc) 2.5V, 10V 5.5mOhm @ 15A, 10V 1.3V @ 250µA 85 nC @ 10 V ±12V 4621 pF @ 10 V - 2.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
IPD15N06S2L64ATMA2

IPD15N06S2L64ATMA2

MOSFET N-CH 55V 19A TO252-31

Infineon Technologies

3,360
IPD15N06S2L64ATMA2

Технический лист

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 4.5V, 10V 64mOhm @ 13A, 10V 2V @ 14µA 13 nC @ 10 V ±20V 354 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
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