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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
TSM60NB099PW C1G

TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

Taiwan Semiconductor Corporation

2,055

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.7A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
NTMT095N65S3H

NTMT095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2,846
NTMT095N65S3H

Технический лист

SuperFET® III 4-PowerTSFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-TDFN (8x8)
IXFA72N20X3

IXFA72N20X3

MOSFET N-CH 200V 72A TO263AA

Littelfuse Inc.

437
IXFA72N20X3

Технический лист

HiPerFET™, Ultra X3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
NTHL095N65S3H

NTHL095N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

226
NTHL095N65S3H

Технический лист

SuperFET® III TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 4V @ 2.8mA 58 nC @ 10 V ±30V 2833 pF @ 400 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SIHG47N60EF-GE3

SIHG47N60EF-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix

463
SIHG47N60EF-GE3

Технический лист

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 67mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
R6520KNZ4C13

R6520KNZ4C13

MOSFET N-CH 650V 20A TO247

Rohm Semiconductor

334
R6520KNZ4C13

Технический лист

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) - - Through Hole TO-247
MSC090SMA070S

MSC090SMA070S

SICFET N-CH 700V D3PAK

Microchip Technology

103
MSC090SMA070S

Технический лист

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 25A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
NTBLS1D5N08MC

NTBLS1D5N08MC

MOSFET N-CH 80V 32A/298A 8HPSOF

onsemi

1,900
NTBLS1D5N08MC

Технический лист

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 298A (Tc) 6V, 10V 1.53mOhm @ 80A, 10V 4V @ 710µA 111 nC @ 10 V ±20V 8170 pF @ 40 V - 2.9W (Ta), 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-HPSOF
FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

418
FDP039N08B-F102

Технический лист

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
R6030KNZC17

R6030KNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

300
R6030KNZC17

Технический лист

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) - - Through Hole TO-3PF
IXTP150N15X4

IXTP150N15X4

MOSFET N-CH 150V 150A TO220

Littelfuse Inc.

290
IXTP150N15X4

Технический лист

Ultra X4 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 7.2mOhm @ 75A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 5500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IXFP26N50P3

IXFP26N50P3

MOSFET N-CH 500V 26A TO220AB

Littelfuse Inc.

250
IXFP26N50P3

Технический лист

HiPerFET™, Polar3™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPZ65R065C7XKSA1

IPZ65R065C7XKSA1

MOSFET N-CH 650V 33A TO247-4

Infineon Technologies

145
IPZ65R065C7XKSA1

Технический лист

CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
MSC180SMA120B

MSC180SMA120B

MOSFET 1200V 25A TO-247

Microchip Technology

105
MSC180SMA120B

Технический лист

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 21A (Tc) 5V, 20V 225mOhm @ 8A, 20V 4.5V @ 500µA 36 nC @ 20 V +23V, -10V 530 pF @ 1000 V - 147W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
NTMFS10N3D2C

NTMFS10N3D2C

MOSFET N-CH 100V 151A POWER56

onsemi

1,150
NTMFS10N3D2C

Технический лист

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 151A (Tc) 6V, 10V 3.2mOhm @ 67A, 10V 4V @ 370µA 84 nC @ 10 V ±20V 6215 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power56
R6030KNZ4C13

R6030KNZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

584
R6030KNZ4C13

Технический лист

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 305W (Tc) 150°C (TJ) - - Through Hole TO-247
IPP65R041CFD7XKSA1

IPP65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies

489
IPP65R041CFD7XKSA1

Технический лист

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

817
IMBG65R072M1HXTMA1

Технический лист

CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 33A (Tc) 18V 94mOhm @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V 744 pF @ 400 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
NVHL055N60S5F

NVHL055N60S5F

SUPERFET5 FRFET, 55MOHM, TO-247-

onsemi

528
NVHL055N60S5F

Технический лист

FRFET®, SUPERFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 4.8V @ 5.2mA 85.2 nC @ 10 V ±30V 4603 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IXFH30N85X

IXFH30N85X

MOSFET N-CH 850V 30A TO247AD

Littelfuse Inc.

290
IXFH30N85X

Технический лист

HiPerFET™, Ultra X TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 850 V 30A (Tc) 10V 220mOhm @ 500mA, 10V 5.5V @ 2.5mA 68 nC @ 10 V ±30V 2460 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
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