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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD60R380E6BTMA1MOSFET N-CH 600V 10.6A TO252-3 |
6,500 |
|
Технический лист |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Discontinued | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPU80R1K4CEAKMA1MOSFET N-CH 800V 3.9A TO251-3 |
3,906 |
|
Технический лист |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
EPC2030ENGRTGANFET NCH 40V 31A DIE |
6,032 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 40 V | 31A (Ta) | 5V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 18 nC @ 5 V | +6V, -4V | 1900 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
EPC2031ENGRTGANFET NCH 60V 31A DIE |
8,440 |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Discontinued | N-Channel | GaNFET (Gallium Nitride) | 60 V | 31A (Ta) | 5V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 17 nC @ 5 V | +6V, -4V | 1800 pF @ 300 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
DMP6185SE-7MOSFET P-CH 60V 3A SOT223 |
6,106 |
|
Технический лист |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued | P-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 150mOhm @ 2.2A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±20V | 708 pF @ 30 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-223-3 |
|
AOB11C60MOSFET N-CH 600V 11A TO263 |
3,208 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 5V @ 250µA | 42 nC @ 10 V | ±30V | 2000 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
AOB20C60MOSFET N-CH 600V 20A TO263 |
3,726 |
|
Технический лист |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 3440 pF @ 100 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
AOD4160MOSFET N-CH TO-252 |
7,003 |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) |
|
|
AOI452AMOSFET N-CH 25V 55A TO251A |
5,840 |
|
Технический лист |
SDMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 55A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 1450 pF @ 12.5 V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251A |
|
AON7548MOSFET N-CH 30V 24A 8DFN |
6,193 |
|
Технический лист |
AlphaMOS | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 1086 pF @ 15 V | - | 3.1W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN-EP (3x3) |
|
AOY516MOSFET N-CH 30V 46A TO251B |
3,443 |
|
Технический лист |
AlphaMOS | TO-251-3 Stub Leads, IPAK | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 46A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.6V @ 250µA | 33 nC @ 10 V | ±20V | 1333 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251B |
|
TPH3202PSGANFET N-CH 600V 9A TO220AB |
4,635 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
TPH3202LDGANFET N-CH 600V 9A 4PQFN |
2,850 |
|
Технический лист |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
|
|
TPH3206LDGANFET N-CH 600V 17A PQFN |
6,343 |
|
Технический лист |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
|
|
TPH3208PSGANFET N-CH 650V 20A TO220AB |
5,167 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
TPH3208LDGANFET N-CH 650V 20A 4PQFN |
4,804 |
|
Технический лист |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
|
TPH3207WSGANFET N-CH 650V 50A TO247-3 |
6,522 |
|
Технический лист |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42 nC @ 8 V | ±18V | 2197 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
TPH3202PDGANFET N-CH 600V 9A TO220AB |
8,196 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
TPH3202LSGANFET N-CH 600V 9A 3PQFN |
3,416 |
|
Технический лист |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
|
TPH3208PDGANFET N-CH 650V 20A TO220AB |
6,493 |
|
Технический лист |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-220AB |
