Пожалуйста, свяжитесь с нами для получения актуальной информации о ценах и наличии товара.

FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IPD60R380P6BTMA1

IPD60R380P6BTMA1

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies

6,443
IPD60R380P6BTMA1

Технический лист

CoolMOS™ P6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
FCH099N60E

FCH099N60E

MOSFET N-CH 600V 37A TO247-3

onsemi

3,253
FCH099N60E

Технический лист

SuperFET® II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 99mOhm @ 18.5A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3465 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
VS-FC80NA20

VS-FC80NA20

MOSFET N-CH 200V 108A SOT227

Vishay General Semiconductor - Diodes Division

2,936

-

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 108A (Tc) 10V 14mOhm @ 80A, 10V 5.5V @ 250µA 161 nC @ 10 V ±30V 10720 pF @ 50 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
DMG7401SFGQ-13

DMG7401SFGQ-13

MOSFET P-CH 30V 9.8A PWRDI3333-8

Diodes Incorporated

2,920
DMG7401SFGQ-13

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 4.5V, 20V 11mOhm @ 12A, 20V 3V @ 250µA 58 nC @ 10 V ±25V 2987 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
DMP3017SFGQ-13

DMP3017SFGQ-13

MOSFET P-CH 30V 11.5A PWRDI3333

Diodes Incorporated

3,794
DMP3017SFGQ-13

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 41 nC @ 10 V ±25V 2246 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
FCD5N60-F085

FCD5N60-F085

MOSFET N-CH 600V 4.6A DPAK

onsemi

8,210
FCD5N60-F085

Технический лист

SuperFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 1.1Ohm @ 4.6A, 10V 5V @ 250µA 21 nC @ 10 V ±30V 570 pF @ 25 V - 54W (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
IRF7780MTRPBF

IRF7780MTRPBF

MOSFET N-CH 75V 89A DIRECTFET

Infineon Technologies

3,669
IRF7780MTRPBF

Технический лист

StrongIRFET™ DirectFET™ Isometric ME Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 89A (Tc) 6V, 10V 5.7mOhm @ 53A, 10V 3.7V @ 150µA 186 nC @ 10 V ±20V 6504 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric ME
IRL40B209

IRL40B209

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

7,716
IRL40B209

Технический лист

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.25mOhm @ 100A, 10V 2.4V @ 250µA 270 nC @ 4.5 V ±20V 15140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL40B212

IRL40B212

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

9,572
IRL40B212

Технический лист

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL40S212

IRL40S212

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

6,715
IRL40S212

Технический лист

StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 150µA 137 nC @ 4.5 V ±20V 8320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IRL60B216

IRL60B216

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

2,857
IRL60B216

Технический лист

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.9mOhm @ 100A, 10V 2.4V @ 250µA 258 nC @ 4.5 V ±20V 15570 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
HAT2192WP-EL-E

HAT2192WP-EL-E

MOSFET N-CH 250V 10A 8WPAK

Renesas Electronics Corporation

8,141
HAT2192WP-EL-E

Технический лист

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 10A (Ta) 10V 230mOhm @ 5A, 10V - 15 nC @ 10 V ±30V 710 pF @ 25 V - 25W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
RJK0629DPE-00#J3

RJK0629DPE-00#J3

MOSFET N-CH 60V 85A 4LDPAK

Renesas Electronics Corporation

6,135
RJK0629DPE-00#J3

Технический лист

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Ta) 4.5V, 10V 4.5mOhm @ 43A, 10V - 85 nC @ 10 V ±20V 4100 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
IPD60R520CPATMA1

IPD60R520CPATMA1

MOSFET N-CH 600V 6.8A TO252-3

Infineon Technologies

4,253
IPD60R520CPATMA1

Технический лист

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R600CPATMA1

IPD60R600CPATMA1

MOSFET N-CH 600V 6.1A TO252-3

Infineon Technologies

8,860
IPD60R600CPATMA1

Технический лист

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPP052NE7N3GHKSA1

IPP052NE7N3GHKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies

5,541
IPP052NE7N3GHKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
FDD9407L-F085

FDD9407L-F085

MOSFET N-CH 40V 100A DPAK

onsemi

7,128
FDD9407L-F085

Технический лист

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 80A, 4.5V 3V @ 250µA 125 nC @ 10 V ±20V 6700 pF @ 25 V - 227W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
IPB60R230P6ATMA1

IPB60R230P6ATMA1

MOSFET N-CH 600V 16.8A TO263-3

Infineon Technologies

9,015
IPB60R230P6ATMA1

Технический лист

CoolMOS™ P6 TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16.8A (Tc) 10V 230mOhm @ 6.4A, 10V 4.5V @ 530µA 31 nC @ 10 V ±20V 1450 pF @ 100 V - 126W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-1
MCH3374-TL-W

MCH3374-TL-W

MOSFET P-CH 12V 3A SC70FL/MCPH3

onsemi

5,691
MCH3374-TL-W

Технический лист

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4V 70mOhm @ 1.5A, 4.5V 1.4V @ 1mA 5.6 nC @ 4.5 V ±8V 405 pF @ 6 V - 1W (Ta) 150°C (TJ) - - Surface Mount SC-70FL/MCPH3
MCH6331-TL-W

MCH6331-TL-W

MOSFET P-CH 30V 3.5A MCPH6

onsemi

7,411
MCH6331-TL-W

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4V, 10V 98mOhm @ 1.5A, 10V 2.6V @ 1mA 5 nC @ 10 V ±20V 250 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount SC-88FL/MCPH6

Начать сейчас!

Получайте последние новости

EASTECH Electronics

Главная

EASTECH Electronics

Поиск

EASTECH Electronics

Продукты

EASTECH Electronics

Whatsapp

Отправка...
×
Отправлено успешно!
Спасибо за вашу заявку. Наши сотрудники отдела продаж получат ваш запрос и свяжутся с вами в течение 12 часов с коммерческим предложением.