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EASTECH Electronics

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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IRFS7734-7PPBF

IRFS7734-7PPBF

MOSFET N-CH 75V 197A D2PAK

Infineon Technologies

5,057
IRFS7734-7PPBF

Технический лист

HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued N-Channel MOSFET (Metal Oxide) 75 V 197A (Tc) 6V, 10V 3.05mOhm @ 100A, 10V 3.7V @ 150µA 270 nC @ 10 V ±20V 10130 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
IRFS7734PBF

IRFS7734PBF

MOSFET N-CH 75V 183A D2PAK

Infineon Technologies

4,810
IRFS7734PBF

Технический лист

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
IRFS7762PBF

IRFS7762PBF

MOSFET N-CH 75V 85A D2PAK

Infineon Technologies

6,878
IRFS7762PBF

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 75 V 85A (Tc) 6V, 10V 6.7mOhm @ 51A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4440 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
IRFS7787PBF

IRFS7787PBF

MOSFET N-CH 75V 76A D2PAK

Infineon Technologies

9,960
IRFS7787PBF

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 75 V 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V 3.7V @ 100µA 109 nC @ 10 V ±20V 4020 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB (D2PAK)
BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1

MOSFET N-CH 25V 170A 2WDSON

Infineon Technologies

3,166
BSB012NE2LXIXUMA1

Технический лист

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 170A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2V @ 250µA 82 nC @ 10 V ±20V 5852 pF @ 12 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
STF150N10F7

STF150N10F7

MOSFET N-CH 100V 65A TO220FP

STMicroelectronics

7,950
STF150N10F7

Технический лист

DeepGATE™, STripFET™ VII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.2mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220FP
STI150N10F7

STI150N10F7

MOSFET N-CH 100V 110A I2PAK

STMicroelectronics

4,252
STI150N10F7

Технический лист

STripFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 4.2mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
PCP1402-TD-H

PCP1402-TD-H

MOSFET N-CH 250V 1.2A SOT89

onsemi

3,410

-

- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 1.2A (Ta) 10V 2.4Ohm @ 600mA, 10V 3.5V @ 1mA 4.2 nC @ 10 V ±30V 210 pF @ 20 V - 3.5W (Tc) 150°C (TJ) - - Surface Mount SOT-89/PCP-2
AUIRFN8401TR

AUIRFN8401TR

MOSFET N-CH 40V 84A PQFN

Infineon Technologies

2,297
AUIRFN8401TR

Технический лист

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 84A (Tc) 10V 4.6mOhm @ 50A, 10V 3.9V @ 50µA 66 nC @ 10 V ±20V 2170 pF @ 25 V - 4.2W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PQFN (5x6)
AUIRFS4115

AUIRFS4115

MOSFET N-CH 150V 99A D2PAK

Infineon Technologies

7,255
AUIRFS4115

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
AUIRFSL4115

AUIRFSL4115

MOSFET N-CH 150V 99A TO262

Infineon Technologies

3,382
AUIRFSL4115

Технический лист

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFH4209DTRPBF

IRFH4209DTRPBF

MOSFET N-CH 25V 44A/260A PQFN

Infineon Technologies

9,147
IRFH4209DTRPBF

Технический лист

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 44A (Ta), 260A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.1V @ 100µA 74 nC @ 10 V ±20V 4620 pF @ 13 V - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6)
IRFP7718PBF

IRFP7718PBF

MOSFET N-CH 75V 195A TO247AC

Infineon Technologies

9,590
IRFP7718PBF

Технический лист

HEXFET®, StrongIRFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.7V @ 250µA 830 nC @ 10 V ±20V 29550 pF @ 25 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRFS4321-7PPBF

IRFS4321-7PPBF

MOSFET N-CH 150V 86A D2PAK

Infineon Technologies

2,509
IRFS4321-7PPBF

Технический лист

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Discontinued N-Channel MOSFET (Metal Oxide) 150 V 86A (Tc) 10V 14.7mOhm @ 34A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFU7540PBF

IRFU7540PBF

MOSFET N-CH 60V 90A IPAK

Infineon Technologies

5,777
IRFU7540PBF

Технический лист

HEXFET®, StrongIRFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFU7546PBF

IRFU7546PBF

MOSFET N-CH 60V 56A IPAK

Infineon Technologies

3,359
IRFU7546PBF

Технический лист

HEXFET®, StrongIRFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFU7740PBF

IRFU7740PBF

MOSFET N-CH 75V 87A IPAK

Infineon Technologies

5,462
IRFU7740PBF

Технический лист

HEXFET®, StrongIRFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 87A (Tc) 6V, 10V 7.2mOhm @ 52A, 10V 3.7V @ 100µA 126 nC @ 10 V ±20V 4430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRFU7746PBF

IRFU7746PBF

MOSFET N-CH 75V 56A IPAK

Infineon Technologies

7,236
IRFU7746PBF

Технический лист

HEXFET®, StrongIRFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
IRLS3813PBF

IRLS3813PBF

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies

9,793
IRLS3813PBF

Технический лист

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
FCPF190N65FL1

FCPF190N65FL1

MOSFET N-CH 650V 20.6A TO220F

onsemi

9,256
FCPF190N65FL1

Технический лист

SuperFET® II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 78 nC @ 10 V ±20V 3055 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3

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