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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IPA65R150CFDXKSA1

IPA65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies

9,781
IPA65R150CFDXKSA1

Технический лист

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 1mA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-111
IPB65R099C6ATMA1

IPB65R099C6ATMA1

MOSFET N-CH 650V 38A D2PAK

Infineon Technologies

4,154
IPB65R099C6ATMA1

Технический лист

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPI65R099C6XKSA1

IPI65R099C6XKSA1

MOSFET N-CH 650V 38A TO262-3

Infineon Technologies

5,424
IPI65R099C6XKSA1

Технический лист

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 127 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
IPP60R074C6XKSA1

IPP60R074C6XKSA1

MOSFET N-CH 600V 57.7A TO220-3

Infineon Technologies

4,659
IPP60R074C6XKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 57.7A (Tc) 10V 74mOhm @ 21A, 10V 3.5V @ 1.4mA 138 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R074C6XKSA1

IPP65R074C6XKSA1

MOSFET N-CH 650V 57.7A TO220-3

Infineon Technologies

5,025
IPP65R074C6XKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 57.7A (Tc) 10V 74mOhm @ 13.9A, 10V 3.5V @ 1.4mA 17 nC @ 10 V ±20V 3020 pF @ 100 V - 480.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R099C6XKSA1

IPP65R099C6XKSA1

MOSFET N-CH 650V 38A TO220-3

Infineon Technologies

9,149
IPP65R099C6XKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 99mOhm @ 12.8A, 10V 3.5V @ 1.2mA 15 nC @ 10 V ±20V 2780 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP65R150CFDXKSA1

IPP65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220-3

Infineon Technologies

4,670
IPP65R150CFDXKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies

9,903
IPS65R1K4C6AKMA1

Технический лист

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
IPU50R1K4CEBKMA1

IPU50R1K4CEBKMA1

MOSFET N-CH 500V 3.1A TO251-3

Infineon Technologies

9,505
IPU50R1K4CEBKMA1

Технический лист

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V 3.5V @ 70µA 8.2 nC @ 10 V ±20V 178 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPU50R2K0CEBKMA1

IPU50R2K0CEBKMA1

MOSFET N-CH 500V 2.4A TO251-3

Infineon Technologies

7,816
IPU50R2K0CEBKMA1

Технический лист

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPU60R600C6BKMA1

IPU60R600C6BKMA1

MOSFET N-CH 600V 7.3A TO251-3

Infineon Technologies

8,565
IPU60R600C6BKMA1

Технический лист

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPU60R950C6BKMA1

IPU60R950C6BKMA1

MOSFET N-CH 600V 4.4A TO251-3

Infineon Technologies

9,376
IPU60R950C6BKMA1

Технический лист

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 1.5 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
FDM15-06KC5

FDM15-06KC5

MOSFET N-CH 600V 15A I4PAC

IXYS

3,188
FDM15-06KC5

Технический лист

CoolMOS™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
FDM47-06KC5

FDM47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS

9,813
FDM47-06KC5

Технический лист

CoolMOS™, HiPerDyn™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
TK20C60W,S1VQ

TK20C60W,S1VQ

MOSFET N-CH 600V 20A I2PAK

Toshiba Semiconductor and Storage

5,501

-

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole I2PAK
FM6K62010L

FM6K62010L

MOSFET N-CH 20V 2A WSMINI6

Panasonic Electronic Components

4,068
FM6K62010L

Технический лист

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V Schottky Diode (Isolated) 700mW (Ta) 125°C (TJ) - - Surface Mount WSMini6-F1-B
FM6L52020L

FM6L52020L

MOSFET N-CH 20V 2.2A WSSMINI6-F1

Panasonic Electronic Components

9,837
FM6L52020L

Технический лист

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V - 540mW (Ta) 125°C (TJ) - - Surface Mount WSSMini6-F1
MTM131270BBF

MTM131270BBF

MOSFET P-CH 20V 2A MINI3-G3-B

Panasonic Electronic Components

2,981

-

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8 V, 4V 130mOhm @ 1A, 4V 1.1V @ 1mA - ±10V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount MINI3-G3-B
STULED656

STULED656

MOSFET N-CH 650V 6A IPAK

STMicroelectronics

7,394
STULED656

Технический лист

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 895 pF @ 100 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-251 (IPAK)
2N6764T1

2N6764T1

MOSFET N-CH 100V 38A TO3

Microsemi Corporation

2,026
2N6764T1

Технический лист

- TO-204AE Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 65mOhm @ 38A, 10V 4V @ 250µA 125 nC @ 10 V ±20V - - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3

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