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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
STP7LN80K5

STP7LN80K5

MOSFET N-CH 800V 5A TO220

STMicroelectronics

454
STP7LN80K5

Технический лист

MDmesh™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 270 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IXTP100N04T2

IXTP100N04T2

MOSFET N-CH 40V 100A TO220AB

Littelfuse Inc.

289
IXTP100N04T2

Технический лист

TrenchT2™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 25.5 nC @ 10 V ±20V 2690 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
NVTFS4C02NTAG

NVTFS4C02NTAG

MOSFET - SINGLE N-CHANNEL POWER,

onsemi

1,423
NVTFS4C02NTAG

Технический лист

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28.3A (Ta), 162A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 2.2V @ 250µA 20 nC @ 4.5 V ±20V 2980 pF @ 15 V - 3.2W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IRFI730GPBF

IRFI730GPBF

MOSFET N-CH 400V 3.7A TO220-3

Vishay Siliconix

1,105
IRFI730GPBF

Технический лист

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3.7A (Tc) 10V 1Ohm @ 2.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
R6013VNXC7G

R6013VNXC7G

600V 8A TO-220FM, PRESTOMOS WITH

Rohm Semiconductor

1,080
R6013VNXC7G

Технический лист

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V, 15V 300mOhm @ 3A, 15V 6.5V @ 500µA 21 nC @ 10 V ±30V 900 pF @ 100 V - 54W (Tc) 150°C (TJ) - - Through Hole TO-220FM
AOB360A70L

AOB360A70L

MOSFET N-CH 700V 12A TO263

Alpha & Omega Semiconductor Inc.

840
AOB360A70L

Технический лист

aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tc) 10V 360mOhm @ 6A, 10V 4V @ 250µA 22.5 nC @ 10 V ±20V 1360 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
XPH4R10ANB,L1XHQ

XPH4R10ANB,L1XHQ

MOSFET N-CH 100V 70A 8SOP

Toshiba Semiconductor and Storage

34,035
XPH4R10ANB,L1XHQ

Технический лист

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 6V, 10V 4.1mOhm @ 35A, 10V 3.5V @ 1mA 75 nC @ 10 V ±20V 4970 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
CMS23N06H8-HF

CMS23N06H8-HF

MOSFET N-CH 60V 23A/125A 8DFN

Comchip Technology

4,998
CMS23N06H8-HF

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Ta), 125A (Tc) 4.5V, 10V 3.1mOhm @ 20A, 10V 2.5V @ 250µA 64 nC @ 10 V ±20V 3467 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
BUK9Y8R8-60ELX

BUK9Y8R8-60ELX

SINGLE N-CHANNEL 60 V, 5.6 MOHM

Nexperia USA Inc.

2,635
BUK9Y8R8-60ELX

Технический лист

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 5.6mOhm @ 25A, 10V 2.1V @ 1mA 123 nC @ 10 V ±10V 6695 pF @ 25 V - 194W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
RJK0655DPB-00#J5

RJK0655DPB-00#J5

MOSFET N-CH 60V 35A LFPAK

Renesas Electronics Corporation

2,500
RJK0655DPB-00#J5

Технический лист

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta) 10V 6.7mOhm @ 17.5A, 10V - 35 nC @ 10 V ±20V 2550 pF @ 10 V - 60W (Tc) 150°C (TJ) - - Surface Mount LFPAK
PJMP900N60EC_T0_00001

PJMP900N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,998
PJMP900N60EC_T0_00001

Технический лист

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.3A, 10V 4V @ 250µA 8.8 nC @ 10 V ±30V 310 pF @ 400 V - 47.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
NTMFS0D8N03CT1G

NTMFS0D8N03CT1G

MOSFET, POWER, SINGLE N-CHANNEL,

onsemi

1,445
NTMFS0D8N03CT1G

Технический лист

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 54A (Ta), 337A (Tc) 4.5V, 10V 0.74mOhm @ 20A, 10V 2.2V @ 200µA 50 nC @ 4.5 V ±20V 7690 pF @ 15 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IRF9520STRLPBF

IRF9520STRLPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix

1,368
IRF9520STRLPBF

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
STP20N65M5

STP20N65M5

MOSFET N-CH 650V 18A TO220

STMicroelectronics

939
STP20N65M5

Технический лист

MDmesh™ V TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
SIR140DP-T1-RE3

SIR140DP-T1-RE3

MOSFET N-CH 25V 71.9A/100A PPAK

Vishay Siliconix

11,100
SIR140DP-T1-RE3

Технический лист

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 71.9A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF6623TRPBF

IRF6623TRPBF

MOSFET N-CH 20V 16A DIRECTFET

Infineon Technologies

8,465
IRF6623TRPBF

Технический лист

HEXFET® DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1360 pF @ 10 V - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ ST
NVMYS007N10MCLTWG

NVMYS007N10MCLTWG

PTNG 100V LL LFPAK4

onsemi

2,960
NVMYS007N10MCLTWG

Технический лист

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 83A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 3V @ 141µA 37 nC @ 10 V ±20V 2700 pF @ 50 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
STD15N60DM6

STD15N60DM6

MOSFET N-CH 600V 12A DPAK

STMicroelectronics

2,483
STD15N60DM6

Технический лист

MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 338mOhm @ 6A, 10V 4.75V @ 250µA 15.3 nC @ 10 V ±25V 607 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
PJMF990N65EC_T0_00001

PJMF990N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000
PJMF990N65EC_T0_00001

Технический лист

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 306 pF @ 400 V - 22.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
SUD35N10-26P-BE3

SUD35N10-26P-BE3

MOSFET N-CH 100V 12A/35A DPAK

Vishay Siliconix

1,504
SUD35N10-26P-BE3

Технический лист

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
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