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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IPP47N10S33AKSA1

IPP47N10S33AKSA1

MOSFET N-CH 100V 47A TO220-3

Infineon Technologies

8,156
IPP47N10S33AKSA1

Технический лист

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 33mOhm @ 33A, 10V 4V @ 2mA 105 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R140CPHKSA1

IPP50R140CPHKSA1

MOSFET N-CH 550V 23A TO220-3

Infineon Technologies

4,071
IPP50R140CPHKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R399CPHKSA1

IPP50R399CPHKSA1

MOSFET N-CH 560V 9A TO220-3

Infineon Technologies

9,884
IPP50R399CPHKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 560 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R520CPHKSA1

IPP50R520CPHKSA1

MOSFET N-CH 550V 7.1A TO220-3

Infineon Technologies

3,210
IPP50R520CPHKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP60R520CPXKSA1

IPP60R520CPXKSA1

MOSFET N-CH 650V 6.8A TO220-3

Infineon Technologies

8,396
IPP60R520CPXKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP60R600CPXKSA1

IPP60R600CPXKSA1

MOSFET N-CH 600V 6.1A TO220-3

Infineon Technologies

6,350
IPP60R600CPXKSA1

Технический лист

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP70N04S307AKSA1

IPP70N04S307AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

4,565
IPP70N04S307AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP70N10S312AKSA1

IPP70N10S312AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies

9,776
IPP70N10S312AKSA1

Технический лист

OptiMOS™ T TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP70N10SL16AKSA1

IPP70N10SL16AKSA1

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies

9,185
IPP70N10SL16AKSA1

Технический лист

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP77N06S212AKSA1

IPP77N06S212AKSA1

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies

6,597
IPP77N06S212AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N03S4L04AKSA1

IPP80N03S4L04AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies

3,431
IPP80N03S4L04AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N04S204AKSA1

IPP80N04S204AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

3,364
IPP80N04S204AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N04S2H4AKSA1

IPP80N04S2H4AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

4,528
IPP80N04S2H4AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N04S3-04

IPP80N04S3-04

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

2,548
IPP80N04S3-04

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S205AKSA1

IPP80N06S205AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

5,156
IPP80N06S205AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.1mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5110 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S208AKSA1

IPP80N06S208AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

8,136
IPP80N06S208AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S209AKSA1

IPP80N06S209AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

7,214
IPP80N06S209AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S2H5AKSA1

IPP80N06S2H5AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

9,663
IPP80N06S2H5AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S2L-07

IPP80N06S2L-07

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

8,671
IPP80N06S2L-07

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP80N06S2L09AKSA1

IPP80N06S2L09AKSA1

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies

4,368
IPP80N06S2L09AKSA1

Технический лист

OptiMOS™ TO-220-3 Tube Discontinued N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 8.5mOhm @ 52A, 10V 2V @ 125µA 105 nC @ 10 V ±20V 2620 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1

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