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FET, MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Тип полевого транзистора | Технология | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Напряжение управления (Макс. Rds On, Мин. Rds On) | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Vgs (макс.) | Входная емкость (Ciss) (Макс.) @ Vds | Характеристика FET | Рассеиваемая мощность (макс.) | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD80R1K4CEATMA1MOSFET N-CH 800V 3.9A TO252-3 |
2,486 |
|
Технический лист |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
TK33S10N1Z,LXHQMOSFET N-CH 100V 33A DPAK |
3,964 |
|
Технический лист |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
CSD16321Q5T25-V, N CHANNEL NEXFET POWER MOS |
530 |
|
Технический лист |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 100A (Tc) | 3V, 8V | 2.4mOhm @ 25A, 8V | 1.4V @ 250µA | 19 nC @ 4.5 V | +10V, -8V | 3100 pF @ 12.5 V | - | 3.1W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
|
RD3G400GNTLMOSFET N-CH 40V 40A TO252 |
14,833 |
|
Технический лист |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 40A, 10V | 2.5V @ 1mA | 19 nC @ 10 V | ±20V | 1410 pF @ 20 V | - | 26W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
SQJ858AEP-T1_BE3MOSFET N-CH 40V 58A PPAK SO-8 |
2,993 |
|
Технический лист |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | - | 6.3mOhm @ 14A, 10V | 2.5V @ 250µA | 55 nC @ 10 V | ±20V | 2450 pF @ 20 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
NVMFS5C466NT1GMOSFET N-CH 40V 15A/49A 5DFN |
1,000 |
|
Технический лист |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta), 49A (Tc) | 10V | 8.1mOhm @ 15A, 10V | 3.5V @ 250µA | 10 nC @ 10 V | ±20V | 625 pF @ 25 V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
SIR4604DP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE |
8,834 |
|
Технический лист |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15.1A (Ta), 49.3A (Tc) | 7.5V, 10V | 9.5mOhm @ 10A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 960 pF @ 30 V | - | 3.9W (Ta), 41.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRFR110TRLPBF-BE3MOSFET N-CH 100V 4.3A DPAK |
2,985 |
|
Технический лист |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | - | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFU014PBFMOSFET N-CH 60V 7.7A TO251AA |
2,611 |
|
Технический лист |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
BUK9M20-60ELXSINGLE N-CHANNEL 60 V, 13 MOHM L |
849 |
|
Технический лист |
- | SOT-1210, 8-LFPAK33 (5-Lead) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 4.5V, 10V | 21mOhm @ 15A, 10V | 2.1V @ 1mA | 56 nC @ 10 V | ±10V | 2941 pF @ 25 V | - | 79.4W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK33 |
|
SIJA52DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
200 |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150 nC @ 20 V | +20V, -16V | 7150 pF @ 20 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
NP35N055YUK-E1-AYMOSFET N-CH 55V 35A 8HSON |
5,000 |
|
Технический лист |
- | 8-PowerLDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 6.7mOhm @ 18A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 3360 pF @ 25 V | - | 1W (Ta), 97W (Tc) | 175°C | - | - | Surface Mount | 8-HSON (5x5.4) |
|
PSMN4R3-40MSHXMOSFET N-CH 40V 95A LFPAK33 |
2,852 |
|
Технический лист |
TrenchMOS™ | SOT-1210, 8-LFPAK33 (5-Lead) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 3.6V @ 1mA | 32 nC @ 10 V | ±20V | 2338 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK33 |
|
|
NVMFS5C466NLT1GMOSFET N-CH 40V 16A/52A 5DFN |
1,390 |
|
Технический лист |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 52A (Tc) | 4.5V, 10V | 7.3mOhm @ 10A, 10V | 2.2V @ 30µA | 16 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.5W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
DMNH4006SPSQ-13MOSFET N-CH 40V 110A PWRDI5060-8 |
515 |
|
Технический лист |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 7mOhm @ 50A, 10V | 4V @ 250µA | 50.9 nC @ 10 V | 20V | 2280 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerDI5060-8 |
|
SQJA72EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE |
9,000 |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1390 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SIRA62DP-T1-RE3MOSFET N-CH 30V 51.4A/80A PPAK |
5,948 |
|
Технический лист |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 51.4A (Ta), 80A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 93 nC @ 10 V | +16V, -12V | 4460 pF @ 15 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
FDMC7660SMOSFET N-CH 30V 20A/40A POWER33 |
2,900 |
|
Технический лист |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 1mA | 66 nC @ 10 V | ±20V | 4325 pF @ 15 V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power33 |
|
RSH065N06TB1MOSFET N-CH 60V 6.5A 8SOP |
2,530 |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16 nC @ 5 V | 20V | 900 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
RD3P050SNFRATLMOSFET N-CH 100V 5A TO252 |
1,263 |
|
Технический лист |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5A (Ta) | 4V, 10V | 190mOhm @ 5A, 10V | 2.5V @ 1mA | 14 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 15W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
