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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
NVTFS6H850NWFTAG

NVTFS6H850NWFTAG

MOSFET N-CH 80V 11A/68A 8WDFN

onsemi

1,470
NVTFS6H850NWFTAG

Технический лист

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 68A (Tc) 10V 9.5mOhm @ 10A, 10V 4V @ 70µA 19 nC @ 10 V ±20V 1140 pF @ 40 V - 3.2W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
N0608N-ZK-E1-AY

N0608N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics Corporation

11,840
N0608N-ZK-E1-AY

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 52A (Tc) 10V 14.3mOhm @ 26A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 1950 pF @ 25 V - 1W (Ta), 50.2W (Tc) 150°C - - Surface Mount TO-252
SI7116BDN-T1-GE3

SI7116BDN-T1-GE3

MOSFET N-CH 40V 18.4A/65A PPAK

Vishay Siliconix

11,232
SI7116BDN-T1-GE3

Технический лист

- PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18.4A (Ta), 65A (Tc) - 7.4mOhm @ 16A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1915 pF @ 20 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
NP75N04VUK-E1-AY

NP75N04VUK-E1-AY

MOSFET N-CH 40V 75A TO252

Renesas Electronics Corporation

8,778
NP75N04VUK-E1-AY

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.7mOhm @ 38A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2400 pF @ 25 V - 1.2W (Ta), 75W (Tc) 175°C - - Surface Mount TO-252 (MP-3ZP)
SQJA38EP-T1_GE3

SQJA38EP-T1_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

5,635
SQJA38EP-T1_GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.9mOhm @ 10A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 3900 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
NVMFD6H852NLT1G

NVMFD6H852NLT1G

MOSFET N-CH 80V 7A/25A 8DFN DL

onsemi

1,390
NVMFD6H852NLT1G

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 25A (Tc) 4.5V, 10V 25.5mOhm @ 10A, 10V 2V @ 26µA 10 nC @ 10 V ±20V 521 pF @ 40 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
IPD30N06S223ATMA2

IPD30N06S223ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies

2,244
IPD30N06S223ATMA2

Технический лист

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 23mOhm @ 21A, 10V 4V @ 50µA 32 nC @ 10 V ±20V 901 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
R6004JNXC7G

R6004JNXC7G

MOSFET N-CH 600V 4A TO220FM

Rohm Semiconductor

846
R6004JNXC7G

Технический лист

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.43Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 260 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FM
SISH434DN-T1-GE3

SISH434DN-T1-GE3

MOSFET N-CH 40V 17.6A/35A PPAK

Vishay Siliconix

8,970
SISH434DN-T1-GE3

Технический лист

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 17.6A (Ta), 35A (Tc) 4.5V, 10V 7.6mOhm @ 16.2A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1530 pF @ 20 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
IRFR210TRPBF-BE3

IRFR210TRPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

5,885
IRFR210TRPBF-BE3

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
NTMFS4C922NAT3G

NTMFS4C922NAT3G

TRENCH 6 30V NCH

onsemi

5,000

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STU2N62K3

STU2N62K3

MOSFET N-CH 620V 2.2A IPAK

STMicroelectronics

4,714
STU2N62K3

Технический лист

SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 620 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 340 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-251 (IPAK)
IRFR210TRLPBF

IRFR210TRLPBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

4,671
IRFR210TRLPBF

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
IRFR310TRPBF-BE3

IRFR310TRPBF-BE3

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix

3,869
IRFR310TRPBF-BE3

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRFR210PBF-BE3

IRFR210PBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2,984
IRFR210PBF-BE3

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
IRFR210TRLPBF-BE3

IRFR210TRLPBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix

2,707
IRFR210TRLPBF-BE3

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
PSMN5R0-40MLHX

PSMN5R0-40MLHX

MOSFET N-CH 40V 85A LFPAK33

Nexperia USA Inc.

1,360
PSMN5R0-40MLHX

Технический лист

TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.15V @ 1mA 39 nC @ 10 V ±20V 2649 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK33
DMPH4015SK3Q-13

DMPH4015SK3Q-13

MOSFET P-CH 40V 14A/45A TO252

Diodes Incorporated

9,787
DMPH4015SK3Q-13

Технический лист

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 45A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 1.7W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

onsemi

5,000
FDMC7680

Технический лист

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 2855 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
SI7308DN-T1-E3

SI7308DN-T1-E3

MOSFET N-CH 60V 6A PPAK1212-8

Vishay Siliconix

5,660
SI7308DN-T1-E3

Технический лист

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 6A (Tc) 4.5V, 10V 58mOhm @ 5.4A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 665 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
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