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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
STB31N65M5

STB31N65M5

MOSFET N-CH 650V 22A D2PAK

STMicroelectronics

9,068
STB31N65M5

Технический лист

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 148mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 150W (Tc) 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
2SK3318

2SK3318

MOSFET N-CH 600V 15A TOP-3F-A1

Panasonic Electronic Components

5,908
2SK3318

Технический лист

- TOP-3F Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 460mOhm @ 7.5A, 10V 4V @ 1mA - ±30V 3500 pF @ 20 V - 3W (Ta), 100W (Tc) 150°C (TJ) - - Through Hole TOP-3F-A1
IRFPF30

IRFPF30

MOSFET N-CH 900V 3.6A TO247-3

Vishay Siliconix

8,337
IRFPF30

Технический лист

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IXTA02N250

IXTA02N250

MOSFET N-CH 2500V 200MA TO263

IXYS

5,962
IXTA02N250

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA
AOK065A60

AOK065A60

N

Alpha & Omega Semiconductor Inc.

2,797
AOK065A60

Технический лист

aMOS5™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4.1A (Ta), 20A (Tc) 10V - - 34 nC @ 10 V 20V 1935 pF @ 100 V - 8.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

MOSFET N-CH 600V 20A PPAK 8 X 8

Vishay Siliconix

2,099
SIHH21N60E-T1-GE3

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 83 nC @ 10 V ±30V 2015 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
TSM60NB150CF

TSM60NB150CF

600V, 24A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

8,105

-

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 150mOhm @ 4.3A, 10V 4V @ 250µA 43 nC @ 10 V ±30V 1765 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220S
IXTH20N65X

IXTH20N65X

MOSFET N-CH 650V 20A TO247

IXYS

8,230
IXTH20N65X

Технический лист

Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
STU16N65M5

STU16N65M5

MOSFET N-CH 650V 12A IPAK

STMicroelectronics

5
STU16N65M5

Технический лист

MDmesh™ V TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 299mOhm @ 6A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1250 pF @ 100 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-251 (IPAK)
IRFPG30

IRFPG30

MOSFET N-CH 1000V 3.1A TO247-3

Vishay Siliconix

6,836
IRFPG30

Технический лист

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IXTP32N65X

IXTP32N65X

MOSFET N-CH 650V 32A TO220-3

IXYS

7,490
IXTP32N65X

Технический лист

Ultra X TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SIHH11N65E-T1-GE3

SIHH11N65E-T1-GE3

MOSFET N-CH 650V 12A PPAK 8 X 8

Vishay Siliconix

6,942
SIHH11N65E-T1-GE3

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 363mOhm @ 6A, 10V 4V @ 250µA 68 nC @ 10 V ±30V 1257 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SCT2280KEC

SCT2280KEC

SICFET N-CH 1200V 14A TO247

Rohm Semiconductor

2,243
SCT2280KEC

Технический лист

- TO-247-3 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 18 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) - - Through Hole TO-247
IXTH75N15

IXTH75N15

MOSFET N-CH 150V 75A TO247

IXYS

4,387

-

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 23mOhm @ 500mA, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5400 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXTH)
IXFA6N120P-TRL

IXFA6N120P-TRL

MOSFET N-CH 1200V 6A TO263

Littelfuse Inc.

5,207
IXFA6N120P-TRL

Технический лист

HiPerFET™, Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
IRF7749L2TRPBF

IRF7749L2TRPBF

MOSFET N-CH 60V 33A DIRECTFET

Infineon Technologies

2,873
IRF7749L2TRPBF

Технический лист

HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 375A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
DMWSH120H90SCT7

DMWSH120H90SCT7

LINEAR IC

Diodes Incorporated

4,746

-

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 38.2A (Tc) 15V 90mOhm @ 20A, 15V 3.5V @ 5mA 54.6 nC @ 15 V +19V, -8V 1078 pF @ 1000 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
2SK4209

2SK4209

MOSFET N-CH 800V 12A TO3PB

onsemi

5,110
2SK4209

Технический лист

- TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 800 V 12A (Ta) 10V 1.08Ohm @ 6A, 10V 4V @ 1mA 75 nC @ 10 V ±30V 1500 pF @ 30 V - 2.5W (Ta), 190W (Tc) 150°C (TJ) - - Through Hole TO-3PB
IXFH6N100F

IXFH6N100F

MOSFET N-CH 1000V 6A TO247

Littelfuse Inc.

9,313

-

HiPerFET™, F Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 1.9Ohm @ 3A, 10V 5.5V @ 2.5mA 54 nC @ 10 V ±20V 1770 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 (IXFH)
STP65N045M9

STP65N045M9

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

5,234
STP65N045M9

Технический лист

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Tc) 10V 45mOhm @ 28A, 10V 4.2V @ 250µA 80 nC @ 10 V ±30V 4610 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220

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