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FET, MOSFET

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип полевого транзистора Технология Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Напряжение управления (Макс. Rds On, Мин. Rds On) Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Vgs (макс.) Входная емкость (Ciss) (Макс.) @ Vds Характеристика FET Рассеиваемая мощность (макс.) Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
NP160N055TUJ-E1-AY

NP160N055TUJ-E1-AY

MOSFET N-CH 55V 160A TO263-7

Renesas Electronics Corporation

8,918
NP160N055TUJ-E1-AY

Технический лист

- TO-263-7, D2PAK (6 Leads + Tab) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 10350 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) - - Surface Mount TO-263-7
TSM60NC165CI

TSM60NC165CI

600V, 24A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,955

-

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 44 nC @ 10 V ±30V 1857 pF @ 300 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
MSC750SMA170SA

MSC750SMA170SA

MOSFET SIC 1700 V 750 MOHM D2PAK

Microchip Technology

5,022
MSC750SMA170SA

Технический лист

- TO-263-8, D2PAK (7 Leads + Tab) Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A (Tc) 20V 940mOhm @ 2.5A, 20V 3.25V @ 100µA (Typ) 11 nC @ 20 V +23V, -10V 184 pF @ 1000 V - 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK-7
IXTA32P20T-TRL

IXTA32P20T-TRL

MOSFET P-CH 200V 32A TO263

Littelfuse Inc.

9,246

-

TrenchP™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDH50N50-F133

FDH50N50-F133

MOSFET N-CH 500V 48A TO247-3

onsemi

5,165
FDH50N50-F133

Технический лист

UniFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
APT9F100B

APT9F100B

MOSFET N-CH 1000V 9A TO247

Microchip Technology

4,088
APT9F100B

Технический лист

POWER MOS 8™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.6Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2606 pF @ 25 V - 337W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
GT070N15Q

GT070N15Q

MOSFET N-CH 150V 155A 330W 5.8M(

Goford Semiconductor

2,946

-

SGT - Active N-Channel MOSFET (Metal Oxide) 150 V 155A (Tc) 10V 5.8mOhm @ 40A, 10V 4V @ 250µA 89 nC @ 10 V 20V 5840 pF @ 75 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
STB200NF04T4

STB200NF04T4

MOSFET N-CH 40V 120A D2PAK

STMicroelectronics

8,464
STB200NF04T4

Технический лист

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.7mOhm @ 90A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5100 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRL3705ZSTRL

IRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

7,484
IRL3705ZSTRL

Технический лист

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - - - - - Surface Mount D2PAK
STB200NF04L

STB200NF04L

MOSFET N-CH 40V 120A D2PAK

STMicroelectronics

2,029
STB200NF04L

Технический лист

STripFET™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 90 nC @ 4.5 V ±16V 6400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
ISC015N06NM5LFATMA1

ISC015N06NM5LFATMA1

OPTIMOSTM5LINEARFET60V

Infineon Technologies

9,694

-

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta), 275A (Tc) 10V 1.55mOhm @ 50A, 10V 3.45V @ 120µA 113 nC @ 10 V ±20V 9000 pF @ 30 V - 3W (Ta), 217W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
IXCP01N90E

IXCP01N90E

MOSFET N-CH 900V 250MA TO220AB

IXYS

8,382
IXCP01N90E

Технический лист

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 250mA (Tc) 10V 80Ohm @ 50mA, 10V 5V @ 25µA 7.5 nC @ 10 V ±20V 133 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IXTT52N30P

IXTT52N30P

MOSFET N-CH 300V 52A TO268

Littelfuse Inc.

2,830
IXTT52N30P

Технический лист

Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IXTT64N25P

IXTT64N25P

MOSFET N-CH 250V 64A TO268

Littelfuse Inc.

3,006
IXTT64N25P

Технический лист

Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 105 nC @ 10 V ±20V 3450 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IXTT74N20P

IXTT74N20P

MOSFET N-CH 200V 74A TO268

Littelfuse Inc.

4,538
IXTT74N20P

Технический лист

Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) 10V 34mOhm @ 37A, 10V 5V @ 250µA 107 nC @ 10 V ±20V 3300 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268AA
STP130N10F3

STP130N10F3

MOSFET N-CH 100V 120A TO220

STMicroelectronics

15
STP130N10F3

Технический лист

STripFET™ III TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 9.6mOhm @ 60A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3305 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
IPB90R340C3ATMA1

IPB90R340C3ATMA1

MOSFET N-CH 900V 15A D2PAK

Infineon Technologies

3,675
IPB90R340C3ATMA1

Технический лист

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
SIHH14N60E-T1-GE3

SIHH14N60E-T1-GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix

2,759
SIHH14N60E-T1-GE3

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 255mOhm @ 7A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1416 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IXFH24N60X

IXFH24N60X

MOSFET N-CH 600V 24A TO247-3

IXYS

8,772
IXFH24N60X

Технический лист

HiPerFET™, Ultra X TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IXTC110N25T

IXTC110N25T

MOSFET N-CH 250V 50A ISOPLUS220

IXYS

9,583
IXTC110N25T

Технический лист

- ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 27mOhm @ 55A, 10V 4.5V @ 1mA 157 nC @ 10 V ±20V 9400 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS220™

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