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FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSCSM120DUM31TBL1NGMOSFET 2N-CH 1200V 79A |
3,193 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120AM31TBL1NGMOSFET 2N-CH 1200V 79A |
2,052 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120HM50T3AGMOSFET 4N-CH 1200V 55A |
6,679 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120VR1M31C1AGMOSFET 2N-CH 1200V 89A |
9,240 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120DUM31CTBL1NGMOSFET 2N-CH 1200V 79A |
8,165 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120AM31CTBL1NGMOSFET 2N-CH 1200V 79A |
3,104 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120AM16T1AGMOSFET 2N-CH 1200V 173A |
5,028 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120DHM31CTBL2NGMOSFET 2N-CH 1200V 79A |
5,827 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Asymmetrical | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MCB40P1200LB-TUBMOSFET 2N-CH 1200V 58A SMPD |
4,053 |
|
Технический лист |
- | 9-SMD Power Module | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 58A | - | - | - | - | - | - | - | - | Surface Mount | SMPD |
|
|
MSCSM120HM31T3AGMOSFET 4N-CH 1200V 89A |
8,784 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120HM31TBL2NGMOSFET 4N-CH 1200V 79A |
5,760 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120DDUM31TBL2NGMOSFET 4N-CH 1200V 79A |
8,448 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel, Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
DF419MR20W3M1HFB11BPSA1MOSFET 4N-CH 2000V 50A AG-EASY3B |
1 |
|
Технический лист |
EasyPACK™ | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel | - | 2000V (2kV) | 50A (Tj) | 26.5mOhm @ 60A, 18V | 5.15V @ 34mA | 234nC @ 18V | 7240pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY3B |
|
|
MSCSM120VR1M16CT3AGMOSFET 2N-CH 1200V 173A |
6,962 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120HM31CTBL2NGMOSFET 4N-CH 1200V 79A |
7,468 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120DDUM31CTBL2NGMOSFET 4N-CH 1200V 79A |
6,453 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel, Common Source | - | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120TAM31T3AGMOSFET 6N-CH 1200V 89A |
7,863 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 3mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
|
MSCSM120AM11T3AGMOSFET 2N-CH 1200V 254A |
9,957 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 254A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 9mA | 696nC @ 20V | 9060pF @ 1000V | 1.067kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
BSM180D12P2C101MOSFET 2N-CH 1200V 204A MODULE |
1 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 23000pF @ 10V | 1130W | -40°C ~ 150°C (TJ) | - | - | - | Module |
|
|
MSCSM120HM16T3AGMOSFET 4N-CH 1200V 173A |
8,197 |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 173A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 6mA | 464nC @ 20V | 6040pF @ 1000V | 745W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
