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Мостовые выпрямители

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип диода Технология Напряжение - Пиковое обратное (макс.) Ток - Средний выпрямленный (Io) Напряжение - Прямой (Vf) (макс.) @ If Ток - Обратный утечка @ Vr Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
TS6P06GH

TS6P06GH

BRIDGE RECT 1PHASE 800V 6A TS-6P

Taiwan Semiconductor Corporation

1,200
TS6P06GH

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 6 A 1.1 V @ 6 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
TS6P04GH

TS6P04GH

BRIDGE RECT 1PHASE 400V 6A TS-6P

Taiwan Semiconductor Corporation

1,174
TS6P04GH

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS-6P
GBL08E-E3/A

GBL08E-E3/A

BRIDGE RECT 1PHASE 800V 2.6A GBL

Vishay General Semiconductor - Diodes Division

2,333
GBL08E-E3/A

Технический лист

- 4-SIP, GBL Bulk Active Single Phase Standard 800 V 2.6 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06E-E3/A

GBL06E-E3/A

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

1,540
GBL06E-E3/A

Технический лист

- 4-SIP, GBL Bulk Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL01E-E3/P

GBL01E-E3/P

BRIDGE RECT 1PHASE 100V 2.6A GBL

Vishay General Semiconductor - Diodes Division

1,500
GBL01E-E3/P

Технический лист

- 4-SIP, GBL Tube Active Single Phase Standard 100 V 2.6 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06E-E3/P

GBL06E-E3/P

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

1,230
GBL06E-E3/P

Технический лист

- 4-SIP, GBL Bulk Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL10E-E3/A

GBL10E-E3/A

BRIDGE RECT 1PHASE 1KV 3A GBL

Vishay General Semiconductor - Diodes Division

735
GBL10E-E3/A

Технический лист

- 4-SIP, GBL Bulk Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBL
T25JA05G-K

T25JA05G-K

BRIDGE RECT 1P 600V 25A TS-6P

Taiwan Semiconductor Corporation

1,500
T25JA05G-K

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 600 V 25 A 1.15 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
T25JA06G-K

T25JA06G-K

BRIDGE RECT 1P 800V 25A TS-6P

Taiwan Semiconductor Corporation

1,500
T25JA06G-K

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 800 V 25 A 1.15 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
T25JA07G-K

T25JA07G-K

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Taiwan Semiconductor Corporation

1,438
T25JA07G-K

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 1 kV 25 A 1.15 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
PB1001

PB1001

BRIDGE RECT 1PHASE 100V 7A PB

Diotec Semiconductor

400
PB1001

Технический лист

- 4-Square, PB Bulk Active Single Phase Standard 100 V 7 A 1.2 V @ 5 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole PB
RPM810_R2_00601

RPM810_R2_00601

BRIDGE RECT 1PHASE 1KV 8A M8

Panjit International Inc.

1,890
RPM810_R2_00601

Технический лист

- 4-SMD, Gull Wing Tape & Reel (TR) Active Single Phase Standard 1 kV 8 A 1.3 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Surface Mount M8
GBJ1004-BP

GBJ1004-BP

BRIDGE RECT 1PHASE 400V 10A GBJ

Micro Commercial Co

1,610
GBJ1004-BP

Технический лист

- 4-SIP, GBJ Tube Not For New Designs Single Phase Standard 400 V 10 A 1.05 V @ 5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBJ
KBJB1510_T0_00301

KBJB1510_T0_00301

GLASS PASSIVATED LOW PROFILE BRI

Panjit International Inc.

1,800
KBJB1510_T0_00301

Технический лист

- - Tube Active - - - - - - - - - - -
TS10K60H

TS10K60H

BRIDGE RECT 1PHASE 600V 10A TS4K

Taiwan Semiconductor Corporation

1,000
TS10K60H

Технический лист

- 4-SIP, TS4K Tube Active Single Phase Standard 600 V 10 A 1.1 V @ 10 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TS4K
KBJ3510_T0_00601

KBJ3510_T0_00601

BRIDGE RECT 1PHASE 1KV 35A KBJ

Panjit International Inc.

9,902
KBJ3510_T0_00601

Технический лист

- 4-SIP, KBJ Tube Active Single Phase Standard 1 kV 35 A 1.1 V @ 35 A 5 µA @ 1 V -55°C ~ 150°C (TJ) - - Through Hole KBJ
GBS4B

GBS4B

BRIDGE RECT 1P 100V 2.3A 4-SIL

Diotec Semiconductor

500
GBS4B

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 100 V 2.3 A 1.05 V @ 2 A 5 µA @ 100 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
GBS4K

GBS4K

BRIDGE RECT 1P 800V 2.3A 4-SIL

Diotec Semiconductor

500
GBS4K

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 800 V 2.3 A 1.05 V @ 2 A 5 µA @ 800 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
GBS4J

GBS4J

BRIDGE RECT 1P 600V 2.3A 4-SIL

Diotec Semiconductor

490
GBS4J

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 600 V 2.3 A 1.05 V @ 2 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B40C3700A

B40C3700A

BRIDGE RECT 1P 80V 2.7A 4-SIL

Diotec Semiconductor

484
B40C3700A

Технический лист

- 4-ESIP Box Active Single Phase Standard 80 V 2.7 A 1 V @ 3 A 5 µA @ 80 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
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