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Мостовые выпрямители

Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Тип диода Технология Напряжение - Пиковое обратное (макс.) Ток - Средний выпрямленный (Io) Напряжение - Прямой (Vf) (макс.) @ If Ток - Обратный утечка @ Vr Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
RS501-G

RS501-G

BRIDGE RECT 1PHASE 50V 5A RS5

Comchip Technology

5,718
RS501-G

Технический лист

- 4-SIP, RS-5 Tray Obsolete Single Phase Standard 50 V 5 A 1 V @ 5 A 10 µA @ 50 V -55°C ~ 125°C (TJ) - - Through Hole RS5
RS504-G

RS504-G

BRIDGE RECT 1PHASE 400V 5A RS5

Comchip Technology

8,417
RS504-G

Технический лист

- 4-SIP, RS-5 Tray Obsolete Single Phase Standard 400 V 5 A 1 V @ 5 A 10 µA @ 400 V -55°C ~ 125°C (TJ) - - Through Hole RS5
GBS4A

GBS4A

BRIDGE RECT 1P 50V 2.3A 4-SIL

Diotec Semiconductor

6,932
GBS4A

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 50 V 2.3 A 1.05 V @ 2 A 5 µA @ 50 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
GBS4D

GBS4D

BRIDGE RECT 1P 200V 2.3A 4-SIL

Diotec Semiconductor

7,409
GBS4D

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 200 V 2.3 A 1.05 V @ 2 A 5 µA @ 200 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B250C1500B

B250C1500B

BRIDGE RECT 1P 600V 1.8A 4-SIL

Diotec Semiconductor

6,250
B250C1500B

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 600 V 1.8 A 1.1 V @ 2 A 5 µA @ 600 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
GBS4G

GBS4G

BRIDGE RECT 1P 400V 2.3A 4-SIL

Diotec Semiconductor

7,025
GBS4G

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 400 V 2.3 A 1.05 V @ 2 A 5 µA @ 400 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B40C1500B

B40C1500B

BRIDGE RECT 1P 80V 1.8A 4-SIL

Diotec Semiconductor

6,374
B40C1500B

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 80 V 1.8 A 1.1 V @ 2 A 5 µA @ 80 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B125C1500B

B125C1500B

BRIDGE RECT 1P 250V 1.8A 4-SIL

Diotec Semiconductor

8,795
B125C1500B

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 250 V 1.8 A 1.1 V @ 2 A 5 µA @ 250 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B500C1500A

B500C1500A

BRIDGE RECT 1P 1KV 1.8A 4-SIL

Diotec Semiconductor

6,855
B500C1500A

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 1 kV 1.8 A 1.1 V @ 2 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
B80C1500A

B80C1500A

BRIDGE RECT 1P 160V 1.8A 4-SIL

Diotec Semiconductor

5,889
B80C1500A

Технический лист

- 4-ESIP Bulk Active Single Phase Standard 160 V 1.8 A 1.1 V @ 2 A 5 µA @ 160 V -50°C ~ 150°C (TJ) - - Through Hole 4-SIL
TS6P01G

TS6P01G

BRIDGE RECT 1PHASE 50V 6A TS-6P

Taiwan Semiconductor Corporation

6,883
TS6P01G

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 50 V 6 A 1.1 V @ 6 A 10 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
TS6P03G

TS6P03G

BRIDGE RECT 1PHASE 200V 6A TS-6P

Taiwan Semiconductor Corporation

6,746
TS6P03G

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 200 V 6 A 1.1 V @ 6 A 10 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
TS6P04G

TS6P04G

BRIDGE RECT 1PHASE 400V 6A TS-6P

Taiwan Semiconductor Corporation

3,084
TS6P04G

Технический лист

- 4-SIP, TS-6P Tube Active Single Phase Standard 400 V 6 A 1.1 V @ 6 A 10 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole TS-6P
DF1502S

DF1502S

BRIDGE RECT 1P 200V 1.5A DF-S

Diodes Incorporated

9,181
DF1502S

Технический лист

- 4-SMD, Gull Wing Bulk Active Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 100 V -65°C ~ 150°C (TJ) - - Surface Mount DF-S
GBU1002

GBU1002

BRIDGE RECT 1PHASE 100V 10A GBU

Taiwan Semiconductor Corporation

2,655
GBU1002

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 100 V 10 A 1.1 V @ 10 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU1001H

GBU1001H

BRIDGE RECT 1PHASE 50V 10A GBU

Taiwan Semiconductor Corporation

7,730
GBU1001H

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 50 V 10 A 1.1 V @ 10 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole GBU
GBU1001

GBU1001

BRIDGE RECT 1PHASE 50V 10A GBU

Taiwan Semiconductor Corporation

4,688
GBU1001

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 50 V 10 A 1.1 V @ 10 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU1003

GBU1003

BRIDGE RECT 1PHASE 200V 10A GBU

Taiwan Semiconductor Corporation

6,250
GBU1003

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU1002H

GBU1002H

BRIDGE RECT 1PHASE 100V 10A GBU

Taiwan Semiconductor Corporation

7,186
GBU1002H

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 100 V 10 A 1.1 V @ 10 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole GBU
GBU1003H

GBU1003H

BRIDGE RECT 1PHASE 200V 10A GBU

Taiwan Semiconductor Corporation

7,182
GBU1003H

Технический лист

- 4-ESIP, GBU Tube Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole GBU
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